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參數資料
| 型號： | FZ600R65KF1 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT-Module |
| 中文描述： | 1200 A, 6300 V, N-CHANNEL IGBT |
| 封裝： | MODULE-9 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 185K |
| 代理商： | FZ600R65KF1 |
Technische Information / Technical Information
FZ 600 R 65 KF1
IGBT-Module
IGBT-Modules
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
T
vj
=125°C
T
vj
=25°C
T
vj
=-40°C
V
CES
6500
6300
5800
V
Kollektor-Dauergleichstrom
DC-collector current
T
C
= 80 °C
I
C,nom.
600
A
T
C
= 25 °C
I
C
1200
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80°C
I
CRM
1200
A
Gesamt-Verlustleistung
total power dissipation
T
C
=25°C, Transistor
P
tot
11,4
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Dauergleichstrom
DC forward current
I
F
600
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
1200
A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
I
2
t
165
k A
2
s
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
10,2
kV
Teilentladungs Aussetzspannung
partial discharge extinction voltage
RMS, f = 50 Hz, Q
PD
typ. 10pC (acc. To IEC 1287)
V
ISOL
5,1
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
I
C
= 600A, V
GE
= 15V, T
vj
= 25°C
V
CE sat
-
4,3
4,9
V
I
C
= 600A, V
GE
= 15V, T
vj
= 125°C
-
5,3
5,9
V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 100mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE(th)
6,4
7,0
8,1
V
Gateladung
gate charge
V
GE
= -15V ... +15V
Q
G
-
8,4
-
μC
Eingangskapazitt
input capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
ies
-
84
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V
CE
= 6300V, V
GE
= 0V, T
vj
= 25°C
V
CE
= 6500V, V
GE
= 0V, T
vj
= 125°C
I
CES
-
0,6
60
-
mA
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
-
400
nA
prepared by: Dr. Oliver Schilling
date of publication: 2002-07-05
approved by: Dr. Schütze 2002-07-05
revision/Status: Series 1
1
FZ 600 R65 KF1 (final1).xls
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