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參數(shù)資料
| 型號： | FZT3019 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN General Purpose Amplifier |
| 中文描述： | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 41K |
| 代理商： | FZT3019 |
2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
F
Absolute Maximum Ratings*
T
a
=25
°
C unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
T
J
, T
STG
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Parameter
Ratings
80
140
7.0
7.0
-55 ~ 150
Units
V
V
V
mA
°
C
- Continuous
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
Parameter
Test Condition
Min.
Max.
Units
Collector-Emitter Sustaining Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I
C
= 30 mA, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 100
μ
A, I
C
= 0
V
CB
= 90 V, I
E
= 0
V
CB
= 90 V, I
E
= 0, T
a
= 150
°
C
80
40
7.0
V
V
V
μ
A
μ
A
μ
A
0.01
10
0.01
I
EBO
On Characteristics
h
FE
Emitter-Cutoff Current
DC Current Gain
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
I
C
= 1.0 A, V
CE
= 10 V
I
C
= 500 mA, I
B
= 15 V
I
C
= 1.0 A, I
B
= 50 V
I
C
= 10 mA, I
B
= 15 V
50
90
100
50
15
300
V
CE(sat)
Collector-Emitter Saturation Voltage
0.2
0.5
1.1
V
V
V
V
BE(sat)
Small Signal Characteristics
f
T
Current Gain - Bandwidth Product
C
cob
Collector-Base Capacitance
C
ibo
Input Capacitance
h
fe
Small Signal current Gain
Base-Emitter Saturation Voltage
I
C
= 50 mA, V
CE
= 10 V, f = 20 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
BE
= 10 V, I
E
= 0, f = 1.0 MHz
I
C
= 50 mA, V
CE
= 10 V,
f = 20 MHz
I
C
= 10 mA, V
CB
= 10 V, f = 4.0 MHz
I
C
= 100 mA, V
CE
= 10 V,
R
S
= 1.0k
, f = 1.0KHz
100
MHz
pF
pF
12
60
400
80
rb’Cc
NF
Collector Base Time Constant
Noise Figure
400
4.0
pS
dB
FZT3019
NPN General Purpose Amplifier
This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 500 mA and collector
voltages up to 80 V.
Sourced from process 12.
SOT-223
1
2
4
3
1. Base 2. Collector 3. Emitter
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