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參數資料
| 型號： | FZT690 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| 中文描述： | NPN硅平面中功率高增益晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 95K |
| 代理商： | FZT690 |
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
*
Very low equivalent on-resistance;
R
CE(sat)
125m
at 2A
*
Gain of 400 at I
C
=1 Amp
*
Very low saturation voltage
APPLICATIONS
*
Darlington replacement
*
Siren Drivers, DC-DC converters
PARTMARKING DETAIL
FZT690B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
45
V
Collector-Emitter Voltage
45
V
Emitter-Base Voltage
5
V
Peak Pulse Current
6
A
Continuous Collector Current
3
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN.
TYP. MAX
.
UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
45
V
I
C
=100
μ
A
Collector-EmitterBreakdown
V
(BR)CEO
45
V
(BR)EBO
5
V
I
C
=10mA*
I
E
=100
μ
A
Emitter-Base Breakdown
Voltage
V
Collector Cut-Off Current
I
CBO
0.1
μ
A
μ
A
V
CB
=35V
Emitter Cut-Off Current
I
EBO
0.1
V
EB
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.1
0.5
V
V
I
C
=0.1A, I
=0.5mA*
I
C
=1A, I
B
=5mA*
I
C
=1A, I
B
=10mA*
Base-Emitter Saturation
Voltage
V
BE(sat)
0.9
V
Base-Emitter Turn-On Voltage
V
BE(on)
h
FE
0.9
V
I
C
=1A, V
CE
=2V*
I
C
=100mA,V
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
MHz I
C
=50mA,V
CE
=5V,f=50MHz
pF
V
EB
=0.5V, f=1MHz
pF
V
CB
=10V, f=1MHz
ns
ns
I
B2
=50mA, V
CC
=10V
Static Forward Current
Transfer Ratio
500
400
150
50
Transition Frequency
f
T
C
ibo
C
obo
t
on
t
off
150
Input Capacitance
200
Output Capacitance
16
Switching Times
33
1300
I
C
=500mA, I
B!
=50mA
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT690B
3 - 221
C
C
E
B
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FZT690B | 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223 制造商:Diodes Incorporated 功能描述:TRANSISTOR, NPN, SOT-223 制造商:Diodes Incorporated 功能描述:HIGH GAIN TRANSISTOR, NPN, 45V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:2W; DC Collector Current:3A; DC Current Gain hFE:500; No. of Pins:4 ;RoHS Compliant: Yes |
| FZT690B | 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223 |
| FZT690BQTA | 制造商:Diodes Incorporated 功能描述: |
| FZT690BTA | 功能描述:達林頓晶體管 NPN High Gain & Crnt RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| FZT690BTC | 功能描述:達林頓晶體管 NPN High Gain & Crnt RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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