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參數(shù)資料
| 型號： | FZT753 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 中文描述： | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 102K |
| 代理商： | FZT753 |
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 FEBRUARY 1996
FEATURES
*
Low saturation voltage
*
Excellent h
FE
specified up to 2A
COMPLEMENTARY TYPE
FZT653
PARTMARKING DETAIL
FZT753
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-6
A
Continuous Collector Current
I
C
-2
A
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
I
CBO
TYP.
MAX.
UNIT
V
CONDITIONS.
I
C
=-100
μ
A
V
(BR)CBO
-120
V
(BR)CEO
-100
V
I
C
=-10mA*
V
(BR)EBO
-5
V
I
E
=-100
μ
A
-0.1
-10
μ
A
μ
A
μ
A
V
V
V
V
CB
=-100V
V
CB
=-100V,
T
amb
=100°C
V
EB
=-4V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-1A, I
B
=-100mA*
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
I
EBO
V
CE(sat)
-0.1
-0.3
-0.5
-1.25
-0.17
-0.30
-0.9
V
BE(sat)
V
BE(on)
-0.8
-1.0
V
I
C
=-1A, V
CE
=-2V*
h
FE
70
100
55
25
100
200
200
170
55
140
300
I
C
=-50mA, V
CE
=-2V*
I
C
=-500mA, V
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
=-100mA, V
CE
=-5V
f=100MHz
V
CB
=-10V f=1MHz
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
Transition Frequency
f
T
MHz
Output Capacitance
Switching Times
C
obo
t
on
t
off
30
pF
ns
ns
40
600
*Measured under pulsed conditions. Pulse Width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT753
3 - 236
C
C
E
B
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FZT753 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR PNP SOT-223 |
| FZT753QTA | 制造商:Diodes Incorporated 功能描述: |
| FZT753TA | 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT753TC | 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT755 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
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