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參數資料
| 型號： | FZT789A-PNP |
| 廠商： | Zetex Semiconductor |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; No. of Contacts:19; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:14-19 |
| 中文描述： | 進步黨硅平面中功率高增益晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 82K |
| 代理商： | FZT789A-PNP |
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 OCTOBER 1995
FEATURES
*
Extremely low equivalent on-resistance;
R
CE(sat)
93m
at 3A
*
Gain of 200 at I
C
=2 Amps and very low saturation voltage
APPLICATIONS
*
Battery powered circuits, fast charge converters
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FZT689B
FZT789A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
-25
V
Collector-Emitter Voltage
-25
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-6
A
Continuous Collector Current
-3
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
V
(BR)CBO
-25
-40
V
I
C
=-100
μ
A
I
C
=-10mA*
I
E
=-100
μ
A
V
CB
=-15V
V
CB
=-15V, T
amb
=100°C
V
(BR)CEO
V
(BR)EBO
-25
-35
V
-5
-8.5
V
Collector Cut-Off Current
I
CBO
-0.1
10
μ
A
μ
A
μ
A
Emitter Cut-Off Current
I
EBO
-0.1
V
EB
=-4V
Saturation Voltages
V
CE(sat)
-0.15
-0.30
-0.30
-0.25
-0.45
-0.50
V
V
V
I
C
=-1A, I
B
=-10mA*
I
C
=-2A, I
B
=-20mA*
I
C
=-3A, I
B
=-100mA*
V
BE(sat)
V
BE(on)
-0.8
-1.0
V
I
C
=-1A, I
B
=-10mA*
I
C
=-1A, V
CE
=-2V*
Base-Emitter
Turn-On Voltage
-0.8
V
Static Forward Current
Transfer Ratio
h
FE
300
250
200
100
800
I
C
=-10mA, V
=-2V
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
I
C
=-50mA, V
CE
=-5V, f=50MHz
V
EB
=-0.5V, f=1MHz
V
CB
=-10V, f=1MHz
I
C
=-500mA, I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
Transition Frequency
f
T
C
ibo
C
obo
t
on
t
off
100
MHz
Input Capacitance
225
pF
Output Capacitance
25
pF
Switching Times
35
400
ns
ns
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT789A
C
C
E
B
3 - 246
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