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參數(shù)資料
| 型號(hào)： | G1961M |
| 英文描述： | Analog IC |
| 中文描述： | 模擬IC |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 158K |
| 代理商： | G1961M |
Features
l Low dark current
l High UV sensitivity
Applications
l Analytical instruments
l UV detection
PHOTODIODE
GaP photodiode
Schottky type
G1961, G1962, G1963
s
General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area
size
Effective
active
area
Reverse
voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material
Package
(mm)
(mm2)
(V)
(°C)
G1961
/Q *
TO-18
1.1 × 1.1
1.0
G1962
/Q
TO-5
2.3 × 2.3
5.2
G1963
/Q
TO-8
4.6 × 4.6
21
5
-10 to +60
-20 to +70
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
Short circuit
current
Isc
lx
Dark
current
ID
Max.
Temp.
coefficient
of
ID
TCID
Rise time
tr
VR=0 V
RL=1 k
Terminal
capacitance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
VR=10 mV
NEP
Type No.
(nm)
λp
Hg
line
254 nm
400 nm
Min.
(A)
Typ.
(A)
V4=10 mV
(pA)
V4=1 V
(pA) (times/°C) (s)
(pF)
Min.
(G)
Typ.
(G) (W/Hz1/2)
G1961
0.04 0.05 2.5
25
5
400
4
40 5.4 × 10-15
G1962
0.23 0.3
5
50
10
1500
2
20 7.6 × 10-15
G1963
190 to 550 440
0.12
0.03
0.1
0.75 0.9
10
100
1.11
30
5000
1
1.1 × 10-14
* Window material Q: quartz glass
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| G1962M | Analog IC |
| G1963M | Analog IC |
| G34100B1EB1 | Single Phase Bridge |
| G34100Z1EB1 | 3 Phase Bridge |
| G34120B1EB1 | Single Phase Bridge |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| G1962 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:GaP photodiode |
| G1962M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| G1963 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:GaP photodiode |
| G1963M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| G1965M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IF Filter for Intercarrier Applications |
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