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參數資料
| 型號： | GA150TD12U |
| 文件頁數： | 1/10頁 |
| 文件大小： | 181K |
| 代理商： | GA150TD12U |
12/29/97
GA150TD120U
"HALF-BRIDGE" IGBT DOUBLE INT-A-PAK
Features
V
CES
=
1200
V
V
CE
(on) typ.
= 2.4V
@V
GE
=
15V
,
I
C
=
150A
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3
Weight of Module
Typ.
—
—
0.1
—
—
400
Max.
0.16
0.20
—
4.0
3.0
—
Units
R
θ
JC
R
θ
JC
R
θ
CS
°C/W
N m
g
Thermal / Mechanical Characteristics
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Peak Switching Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
1200
150
300
300
300
±20
2500
780
406
Units
V
V
CES
I
C
@ T
C
= 25°C
I
CM
I
LM
I
FM
V
GE
V
ISOL
P
D
@ T
C
= 25°C
P
D
@ T
C
= 85°C
T
J
T
STG
A
V
W
-40 to +150
-40 to +125
°C
Standard: Optimized for minimum saturation
voltage and operating frequencies up to 10kHz
Very low conduction and switching losses
HEXFRED
antiparallel diodes with ultra- soft
recovery
Industry standard package
UL approved
Benefits
Increased operating efficiency
Direct mounting to heatsink
Performance optimized for power conversion: UPS,
SMPS, Welding
Lower EMI, requires less snubbing
PRELIMINARY
PD -5.067
Generation 4 IGBT technology
www.irf.com
1
Ultra-Fast
TM
Speed IGBT
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相關代理商/技術參數 |
參數描述 |
|---|---|
| GA150TS60U | 制造商:ICS 制造商全稱:ICS 功能描述:HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT |
| GA152-10-12 | 功能描述:高頻/射頻繼電器 Ultramin High Repeat SMT DC-5GHz RoHS:否 制造商:Omron Electronics 觸點形式:2 Form C (DPDT-BM) 觸點電流額定值: 線圈電壓:5 VDC 線圈類型:Non-Latching 頻率: 功耗:100 mW 端接類型:Solder Terminal 絕緣:20 dB to 30 dB at 1 GHz 介入損耗:0.2 dB at 1 GHz |
| GA152-10-12/G | 功能描述:高頻/射頻繼電器 Ultramin High Repeat SMT DC-5GHz RoHS:否 制造商:Omron Electronics 觸點形式:2 Form C (DPDT-BM) 觸點電流額定值: 線圈電壓:5 VDC 線圈類型:Non-Latching 頻率: 功耗:100 mW 端接類型:Solder Terminal 絕緣:20 dB to 30 dB at 1 GHz 介入損耗:0.2 dB at 1 GHz |
| GA152-10-12/SG | 制造商:Teledyne Relays 功能描述:ATTENUATOR - Bulk |
| GA152-10-15 | 功能描述:高頻/射頻繼電器 Ultramin High Repeat SMT DC-5GHz RoHS:否 制造商:Omron Electronics 觸點形式:2 Form C (DPDT-BM) 觸點電流額定值: 線圈電壓:5 VDC 線圈類型:Non-Latching 頻率: 功耗:100 mW 端接類型:Solder Terminal 絕緣:20 dB to 30 dB at 1 GHz 介入損耗:0.2 dB at 1 GHz |
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