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參數資料
| 型號： | GA200SA60UP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 200 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors N-Ch 600 Volt 100A |
| 文件頁數： | 1/8頁 |
| 文件大小： | 149K |
| 代理商： | GA200SA60UP |
GA200SA60UP
Vishay Semiconductors
www.vishay.com
Revision: 26-Oct-11
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 94364
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 100 A
FEATURES
Ultrafast: Optimized for minimum saturation
voltage and speed up to 40 kHz in hard
switching, > 200 kHz in resonant mode
Very low conduction and switching losses
Fully isolate package (2500 V
AC/RMS
)
Very low internal inductance (
5 nH typical)
Industry standard outline
UL approved file E78996
Compliant to RoHS Directive 2002/95/EC
Designed and qualified for industrial level
BENEFITS
Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
Lower overall losses available at frequencies = 20 kHz
Easy to assemble and parallel
Direct mounting to heatsink
Lower EMI, requires less snubbing
Plug-in compatible with other SOT-227 packages
PRODUCT SUMMARY
V
CES
V
CE(on)
(typical)
V
GE
I
C
600 V
1.92 V
15 V
100 A
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter breakdown voltage
V
CES
600
V
Continuous collector current
I
C
T
C
= 25 °C
T
C
= 100 °C
200
A
100
Pulsed collector current
I
CM
400
Clamped inductive load current
I
LM
V
CC
= 80 % (V
CES
), V
GE
= 20 V,
L = 10 μH, R
G
= 2.0
,
See fig. 13a
400
Gate to emitter voltage
V
GE
± 20
V
Reverse voltage avalanche energy
E
ARV
Repetitive rating; pulse width limited
by maximum junction temperature
160
mJ
RMS isolation voltage
V
ISOL
Any terminal to case, t = 1 minute
2500
V
Maximum power dissipation
P
D
T
C
= 25 °C
T
C
= 100 °C
500
W
200
Operating junction and storage
temperature range
T
J
, T
Stg
- 55 to + 150
°C
Mounting torque
6-32 or M3 screw
1.3 (12)
N
m
(lbf
in)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TYP.
MAX.
UNITS
Junction to case
R
thJC
R
thCS
-
0.25
°C/W
Case to sink, flat, greased surface
0.05
-
Weight of module
30
-
g
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相關代理商/技術參數 |
參數描述 |
|---|---|
| GA200SA60UPBF | 制造商:Vishay Semiconductors 功能描述:IGBT SOT-227 TUBE 10 |
| GA200TD120U | 制造商:International Rectifier 功能描述: |
| GA200TS60U | 制造商:Vishay Angstrohm 功能描述:Trans IGBT Module N-CH 600V 265A 7-Pin INT-A-PAK |
| GA200TS60UPBF | 功能描述:IGBT 模塊 600 Volt 200 Amp RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| GA200TS60UX | 功能描述:IGBT 模塊 600 Volt 200 Amp RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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