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參數資料
型號: GAL22V10-20LNI
英文描述: Electrically-Erasable PLD
中文描述: 電可擦除可編程邏輯器件
文件頁數: 1/18頁
文件大小: 223K
代理商: GAL22V10-20LNI
1
GAL22LV10
Low Voltage E
2
CMOS PLD
Generic Array Logic
2
28
N
I
I
I
I
I
I
I
I
I
NC
NC
N
G
I
I
I
I
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
V
I
I
I
4
26
25
19
18
21
23
16
14
12
11
9
7
5
Features
HIGH PERFORMANCE E
2
CMOS
TECHNOLOGY
— 4 ns Maximum Propagation Delay
— Fmax = 250 MHz
— 3 ns Maximum from Clock Input to Data Output
— UltraMOS
Advanced CMOS Technology
3.3V LOW VOLTAGE 22V10 ARCHITECTURE
— JEDEC-Compatible 3.3V Interface Standard
— 5V Compatible Inputs
— I/O Interfaces with Standard 5V TTL Devices
(GAL22LV10C)
ACTIVE PULL-UPS ON ALL PINS (GAL22LV10D)
E
2
CELL TECHNOLOGY
— Reconfigurable Logic
— Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure (<100ms)
— 20 Year Data Retention
TEN OUTPUT LOGIC MACROCELLS
— Maximum Flexibility for Complex Logic Designs
— Programmable Output Polarity
PRELOAD AND POWER-ON RESET OF ALL REGISTERS
— 100% Functional Testability
APPLICATIONS INCLUDE:
— Glue Logic for 3.3V Systems
— DMA Control
— State Machine Control
— High Speed Graphics Processing
— Standard Logic Speed Upgrade
ELECTRONIC SIGNATURE FOR IDENTIFICATION
P
A
(
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I
I/CLK
I
I
I
I
I
I
I
I
I
I
RESET
PRESET
8
10
12
14
16
16
14
12
10
8
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
GAL22LV10
Top View
PLCC
Copyright 2002 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject
to change without notice.
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.
Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com
June 2002
Description
The GAL22LV10D, at 4 ns maximum propagation delay time, pro-
vides the highest speed performance available in the PLD market.
The GAL22LV10C can interface with both 3.3V and 5V signal levels.
The GAL22LV10 is manufactured using Lattice Semiconductor's
advanced 3.3V E
2
CMOS process, which combines CMOS with
Electrically Erasable (E
2
) floating gate technology. High speed erase
times (
<
100ms) allow the devices to be reprogrammed quickly and
efficiently.
The generic architecture provides maximum design flexibility by
allowing the Output Logic Macrocell (OLMC) to be configured by
the user.
Unique test circuitry and reprogrammable cells allow complete AC,
DC, and functional testing during manufacture. As a result, Lattice
Semiconductor delivers 100% field programmability and function-
ality of all GAL products. In addition, 100 erase/write cycles and
data retention in excess of 20 years are specified.
22lv10_05
New 5V
Inputs on
Tolerant
22LV10D
Functional Block Diagram
Pin Configuration
相關PDF資料
PDF描述
GAL22V10-20LPI Electrically-Erasable PLD
GAL22V10-20LVI Electrically-Erasable PLD
GAL22V10-25LJ Electrically-Erasable PLD
GAL22V10-25LJI Electrically-Erasable PLD
GAL22V10-25LNC Electrically-Erasable PLD
相關代理商/技術參數
參數描述
GAL22V10-20LNM 制造商:NSC 制造商全稱:National Semiconductor 功能描述:GENERIC ARRAY LOGIC
GAL22V10-20LPI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Electrically-Erasable PLD
GAL22V10-20LR/883 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ASIC
GAL22V10-20LVC 制造商:NSC 制造商全稱:National Semiconductor 功能描述:GENERIC ARRAY LOGIC
GAL22V10-20LVI 制造商:Rochester Electronics LLC 功能描述:- Bulk
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