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參數資料
| 型號： | GB15XP120KTPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 30 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT, MTP, 13 PIN, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 1200 Volt 30 Amp |
| 文件頁數： | 1/10頁 |
| 文件大小： | 169K |
| 代理商： | GB15XP120KTPBF |
Document Number: 93913
Revision: 03-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
1
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED
Diodes, 15 A
GB15XP120KTPbF
Vishay Semiconductors
FEATURES
Generation 5 NPT 1200 V IGBT technology
HEXFRED
diode with ultrasoft reverse
recovery
Very low conduction and switching losses
Optional SMT thermistor (NTC)
Aluminum oxide DBC
Very low stray inductance design for high speed operation
Short circuit 10 μs
Square RBSOA
Operating frequencies 8 kHz to 60 kHz
UL approved file E78996
Compliant to RoHS directive 2002/95/EC
Designed and qualified for industrial level
BENEFITS
Optimized for inverter motor drive applications
Low EMI, requires less snubbing
Direct mounting to heatsink
PCB solderable terminals
Very low junction to case thermal resistance
PRODUCT SUMMARY
V
CES
1200 V
V
CE(on)
typical at V
GE
= 15 V
2.51 V
I
C
at T
C
= 100 °C
15 A
t
sc
at T
J
= 150 °C
> 10 μs
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
1200
V
Continuous collector current
I
C
T
C
= 25 °C
30
A
T
C
= 100 °C
15
Pulsed collector current
I
CM
60
Peak switching current
I
LM
60
Diode continuous forward current
I
F
T
C
= 100 °C
15
Peak diode forward current
I
FM
30
Gate to emitter voltage
V
GE
± 20
V
RMS isolation voltage
V
ISOL
Any terminal to case, t = 1 min
2500
Maximum power dissipation
(including diode and IGBT)
P
D
T
C
= 25 °C
187
W
T
C
= 100 °C
75
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