- 您現在的位置：買賣IC網 > PDF目錄385298 > GB75DA120UP (VISHAY SEMICONDUCTORS) TRANSISTOR 131 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor PDF資料下載
參數資料
| 型號： | GB75DA120UP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 131 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 1200 Volt 75 Amp Generation V |
| 文件頁數： | 1/10頁 |
| 文件大小： | 175K |
| 代理商： | GB75DA120UP |
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
GB75DA120UP
Vishay Semiconductors
Document Number: 93011
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
1
FEATURES
NPT Generation V IGBT technology
Square RBSOA
HEXFRED
low Q
rr
, low switching energy
Positive V
CE(on)
temperature coefficient
Fully isolated package
Speed 8 kHz to 60 kHz
Very low internal inductance (
5 nH typical)
Industry standard outline
UL approved file E78996
Compliant to RoHS directive 2002/95/EC
BENEFITS
Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
Easy to assemble and parallel
Direct mounting on heatsink
Plug-in compatible with other SOT-227 packages
Low EMI, requires less snubbing
PRODUCT SUMMARY
V
CES
1200 V
I
C
DC
75 A at 95 °C
V
CE(on)
typical at 75 A, 25 °C
3.3 V
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S
YMBOL
TE
S
T CONDITION
S
MAX.
UNIT
S
Collector to emitter voltage
V
CES
1200
V
Continuous collector current
I
C
T
C
= 25 °C
131
A
T
C
= 80 °C
89
Pulsed collector current
I
CM
200
Clamped inductive load current
I
LM
200
Diode continuous forward current
I
F
T
C
= 25 °C
59
T
C
= 80 °C
39
Gate to emitter voltage
V
GE
± 20
V
Power dissipation, IGBT
P
D
T
C
= 25 °C
658
W
T
C
= 80 °C
369
Power dissipation, diode
P
D
T
C
= 25 °C
240
T
C
= 80 °C
135
Isolation voltage
V
ISOL
Any terminal to case, t = 1 min
2500
V
相關PDF資料 |
PDF描述 |
|---|---|
| GBJ602 | Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 6.0 A |
| GBJ603 | Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 6.0 A |
| GBJ604 | Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 6.0 A |
| GBJ606 | Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 6.0 A |
| GBJ601 | Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 6.0 A |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GB75XF60K | 功能描述:IGBT 模塊 100 Amp 600 Volt Non-Punch Through RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| GB75YF120N | 制造商:IRF 制造商全稱:International Rectifier 功能描述:IGBT FOUR PAK MODULE |
| GB75YF120UT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:IGBT Fourpack Module, 75 A |
| GB7B | 制造商:Thomas & Betts 功能描述:Outlet Boxes , Drawn 31.2 Inch Octagonal And Outlet Boxes . 11.2 Inch Deep |
| GB7NB60KD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT |
發布緊急采購，3分鐘左右您將得到回復。