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參數資料
| 型號： | GBJ2010 |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 20A GLASS PASSIVATED BRIDGE RECTIFIER |
| 中文描述： | 20 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | PLASTIC, GBJ, 4 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 74K |
| 代理商： | GBJ2010 |
DS21220 Rev. 6 - 2
1 of 3
GBJ20005-GBJ2010
www.diodes.com
Diodes Incorporated
Features
GBJ20005 - GBJ2010
20A GLASS PASSIVATED BRIDGE RECTIFIER
GBJ
Dim
Min
Max
A
29.70
30.30
B
19.70
20.30
C
17.00
18.00
D
3.80
4.20
E
7.30
7.70
G
9.80
10.20
H
2.00
2.40
I
0.90
1.10
J
2.30
2.70
K
3.0 X 45°
L
4.40
4.80
M
3.40
3.80
N
3.10
3.40
P
2.50
2.90
R
0.60
0.80
S
10.80
11.20
All Dimensions in mm
_
B
C
D
EE
G
H
K
J
I
L
M
N
P
R
S
A
Characteristic
Symbol
GBJ
20005
GBJ
2001
GBJ
2002
GBJ
2004
GBJ
2006
GBJ
2008
GBJ
2010
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Forward Rectified Output Current
@ TC = 110°C
IO
20
A
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
IFSM
240
A
Forward Voltage per element
@ IF = 10A
VFM
1.05
V
Peak Reverse Current
@ TA = 25°C
at Rated DC Blocking Voltage
@ TC = 125°C
IR
10
500
A
I2t Rating for Fusing (t < 8.3 ms) (Note 1)
I2t
240
A2s
Typical Total Capacitance per Element (Note 2)
CT
60
pF
Typical Thermal Resistance Junction to Case (Note 3)
RqJC
0.8
°C/W
Operating and Storage Temperature Range
Tj,TSTG
-55 to +150
°C
Case: GBJ
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Plated Leads, Solderable per MIL-STD-202,
Method 208
Also Available in Lead Free Plating (Bright Tin Finish).
Please see Ordering Information, Note 6, on Page 3
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Marking: Type Number
Weight: 6.6 grams (approximate)
Mechanical Data
Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 240A Peak
Ideal for Printed Circuit Board Applications
UL Listed Under Recognized Component
Index, File Number E94661
Available in Lead Free Finish/RoHS Compliant Version
(Note 4)
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Notes:
1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Unit mounted on 300 x 300 x 1.6mm Cu plate heat sink.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
相關PDF資料 |
PDF描述 |
|---|---|
| GBJ20005 | 20A GLASS PASSIVATED BRIDGE RECTIFIER |
| GBJ2001 | 20A GLASS PASSIVATED BRIDGE RECTIFIER |
| GBJ2002 | 20A GLASS PASSIVATED BRIDGE RECTIFIER |
| GBJ25005 | 25A GLASS PASSIVATED BRIDGE RECTIFIER |
| GBJ2501 | 25A GLASS PASSIVATED BRIDGE RECTIFIER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GBJ2010-BP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Rectifier Bridge Single 1KV 20A 4-Pin(4+Tab) GBJ Bulk |
| GBJ2010-F | 功能描述:橋式整流器 1000V 20A RoHS:否 制造商:Vishay 產品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| GBJ2010-G | 功能描述:橋式整流器 DIODE RECT BRIDGE GPP 20A 1000V RoHS:否 制造商:Vishay 產品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| GBJ2010TB | 功能描述:BRIDGE RECT 1PHASE 1KV 20A GBJ 制造商:smc diode solutions 系列:- 包裝:剪切帶（CT） 零件狀態:在售 二極管類型:單相 技術:標準 電壓 - 峰值反向（最大值）:1kV 電流 - 平均整流（Io）:20A 不同 If 時的電壓 - 正向（Vf:1.1V @ 20A 不同?Vr 時的電流 - 反向漏電流:5μA @ 1000V 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:通孔 封裝/外殼:4-ESIP 供應商器件封裝:GBJ 標準包裝:15 |
| GBJ202 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:2.0AMP Glass Passivated Bridge Rectifiers |
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