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參數(shù)資料
| 型號： | GBJ2510 |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 25A GLASS PASSIVATED BRIDGE RECTIFIER |
| 中文描述： | 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | PLASTIC, GBJ, 4 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 68K |
| 代理商： | GBJ2510 |
DS21221 Rev. D-2
1 of 2
GBJ25005-GBJ2510
www.diodes.com
Diodes Incorporated
Features
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 350A Peak
Ideal for Printed Circuit Board Applications
Plastic Material - UL Flammability
Classification 94V-0
UL Listed Under Recognized Component
Index, File Number E94661
GBJ25005 - GBJ2510
25A GLASS PASSIVATED BRIDGE RECTIFIER
Case: Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Weight: 6.6 grams (approx)
Marking: Type Number
Mechanical Data
GBJ
Dim
Min
Max
A
29.70
30.30
B
19.70
20.30
C
17.00
18.00
D
3.80
4.20
E
7.30
7.70
G
9.80
10.20
H
2.00
2.40
I
0.90
1.10
J
2.30
2.70
K
3.0 X 45°
L
4.40
4.80
M
3.40
3.80
N
3.10
3.40
P
2.50
2.90
R
0.60
0.80
S
10.80
11.20
All Dimensions in mm
_
B
C
D
EE
G
H
K
J
I
L
M
N
P
R
S
A
Characteristic
Symbol
GBJ
25005
GBJ
2501
GBJ
2502
GBJ
2504
GBJ
2506
GBJ
2508
GBJ
2510
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Forward Rectified Output Current
(Note 1)
@ TC = 100°C
IO
25
A
Non-Repetitive Peak Forward Surge Current 8.3 ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
350
A
Forward Voltage (per element)
@ IF = 12.5A
VFM
1.05
V
Peak Reverse Current
@TC = 25°C
at Rated DC Blocking Voltage
@ TC = 125°C
IR
10
500
A
I2t Rating for Fusing (t < 8.3ms) (Note 1)
I2t
510
A2s
Typical Junction Capacitance (per element) (Note 2)
Cj
85
pF
Typical Thermal Resistance Junction to Case (Note 3)
RqJC
0.6
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Notes:
1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.
SPICE MODEL: GBJ2510
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GBJ2510-BP | 功能描述:橋式整流器 25A 1000V RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| GBJ2510-F | 功能描述:橋式整流器 1000V 25A RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| GBJ2510-G | 功能描述:橋式整流器 DIODE RECT BRIDGE GPP 25A 1000V RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| GBJ2510-G-03 | 功能描述:橋式整流器 VR=1000V IAV=25.0A RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| GBJ2510-G-04 | 功能描述:橋式整流器 VR=1000V IAV=25.0A RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
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