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參數(shù)資料
| 型號： | GCDA05 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Time-Delay Relay; Contacts:DPDT; Time Range:1.2 to 120s; Mounting Type:Plug-In; Timing Function:Delay-On-Dropout; Contact Carrying Power:2VA |
| 中文描述： | 低電容ESD保護(hù)二極管陣列高高速數(shù)據(jù)接口 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 86K |
| 代理商： | GCDA05 |
VISHAY
GCDA05
Document Number 85806
Rev. 3, 18-Jul-03
Vishay Semiconductors
www.vishay.com
1
17465
6
7
8
5
4
1
2
3
Low Capacitance ESD Protection Diode Array for High-Speed
Data Interfaces
Features
Transient protection for data lines as per
IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact)
IEC 61000-4-5 (Lightning) 12 A (tp = 8/ 20
μ
s)
Small package for use in portable electronics
Protects two I/O lines
Low capacitance for high-speed data lines
Low leakage current
Mechanical Data
Case:
SO-8 molded Plastic body
Molding Compound Flammability Rating:
UL 94 V-0
Terminals:
High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight:
0.5 g
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Peak pulse power
Thermal Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Operation temperature
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Reverse stand-off voltage
Test condition
Symbol
P
PPM
Value
300
Unit
W
8/20
μ
s waveform
Test condition
Symbol
T
J
T
stg
T
L
Value
Unit
°C
- 55 to + 125
Storage temperature
- 55 to + 150
°C
Lead soldering temperature
(10 sec)
260
°C
Test condition
Symbol
V
RWM
V
BR
I
R
V
C
V
C
C
j
Min
Typ.
Max
5
Unit
V
Reverse breakdown voltage
I
t
= 1 mA
V
RWM
= 5 V
I
PP
= 5 A, 8/20
μ
s waveform
I
PP
= 1 A, 8/20
μ
s waveform
V
R
= 0 V, f = 1 MHz
6
V
μ
A
V
Reverse leakage current
20
Clamping voltage
11
9.8
V
Junction capacitance between
I/O pins and GND
5
pF
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