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參數資料
| 型號： | GF2M303 |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 20V V(BR)DSS | 2.3A I(D) | TSOP |
| 中文描述： | 晶體管| MOSFET的|配對| P通道| 20V的五（巴西）直| 2.3AI（四）|的TSOP |
| 文件頁數： | 1/4頁 |
| 文件大小： | 68K |
| 代理商： | GF2M303 |
GF2M303
Vishay Semiconductor
Document Number 74517
5-Dec-01
www.vishay.com
1
New Product
Dual P-Channel Logic Level
Enhancement-Mode MOSFET
ILLION
T
ECHNOLOGY
G
EN
F
ET
C
ELL
T
RENCH
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Popular SOT-23-6L package with copper lead-frame for
superior thermal and electrical capabilities
Compact and low profile
–1.8V rated
Maximum Ratings and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
–20
±
8
V
Gate-Source Voltage
Continuous Drain Current
(2)
T
J
= 150°C
Pulsed Drain Current
(1)
V
GS
T
A
= 25°C
T
A
= 70°C
I
D
–2.3
–1.8
A
I
DM
–8
Maximum Power Dissipation
(2)
T
A
= 25°C
T
A
= 70°C
P
D
1.15
0.73
W
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance
(2)
T
J
, T
stg
–55 to 150
°C
R
θ
JA
110
°C/W
Note:
(1) Pulse width limited by maximum junction temperature.
(2) Surface mounted on a 1in
2
2oz. Cu PCB (FR-4 material)
Mechanical Data
Case:
SOT-23-6L package
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
Marking Code:
M3
V
DS
–20V
R
DS(ON)
0.135
I
D
–2.3A
Mounting Pad Layout
Pin Configuration (Top View)
SOT-23-6L
1
6
2
5
3
4
G
S
G
0.037 (0.95)
Ref.
0.074 (1.9)
Ref.
0.094 (2.4)
0.028 (0.7)
0.039
(1.07)
0.122 (3.10)
0.114 (2.90)
0.067 (1.70)
0.059 (1.50)
0.118 (3.00)
0.106 (2.70)
0.020 (0.50)
0.010 (0.25)
0.004 (0.10)
0.0005 (0.013)
0.075 (1.90)
0.008 (0.20)
0.004 (0.10)
10
°
Typical
0.039 (1.00)
0.036 (0.90)
0.037 (0.95)
Top View
Dimensions in inches
and (millimeters)
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