- 您現在的位置：買賣IC網 > PDF目錄375997 > GF4450 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 7.5A I(D) | SO PDF資料下載
參數資料
| 型號： | GF4450 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 7.5A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 7.5AI（四）|蘇 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 82K |
| 代理商： | GF4450 |
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low
On-Resistance
Specially Designed for Low Voltage DC/DC
Converters
Fast Switching for High Efficiency
High temperature soldering in accordance
with CECC802/Reflow guaranteed
Maximum Ratings and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
60
±
20
V
Gate-Source Voltage
Continuous Drain Current
(1)
V
GS
I
D
7.5
A
Pulsed Drain Current
I
DM
50
Maximum Power Dissipation
(1)
T
A
= 25°C
T
A
= 70°C
P
D
2.5
1.6
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
°C
Junction-to-Ambient Thermal Resistance (PCB mounted)
R
θ
JA
50
°C/W
Note:
(1) Surface Mounted on FR4 Board, t
≤
10s
Mechanical Data
Case:
SO-8 molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
Mounting Position:
Any
Weight:
0.5g
Packaging codes/options:
5B - 2.5K per reel, 12.5K per carton
GF4450
N-Channel Enhancement-Mode MOSFET
V
DS
60V
R
DS(ON)
24
m
I
D
7.5A
NewProduct
6/14/00
S
1
D
8
D
7
D
6
D
5
S
2
S
3
G
4
0.245 (6.22)
Min.
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
0.165 (4.19)
0.155 (3.94)
0.05 (1.27)
0.04 (1.02)
Mounting Pad Layout
5
1
4
0.244 (6.20)
0.228 (5.79)
8
0.157 (3.99)
0.150 (3.81)
0.020 (0.51)
0.013 (0.33)
0.050 (1.27)
0.009 (0.23)
0.004 (0.10)
0.197 (5.00)
0.189 (4.80)
0.069 (1.75)
0.053 (1.35)
0.019 (0.48)
°
0
°
–
8
°
0.050(1.27)
0.016 (0.41)
0.009 (0.23)
0.007 (0.18)
Dimensions in inches
and (millimeters)
SO-8
T
RENCH
G
EN
F
ET
TM
相關PDF資料 |
PDF描述 |
|---|---|
| GF4800 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 9A I(D) | SO |
| GF4810 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO |
| GF4936 | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5.8A I(D) | SO |
| GF4953 | TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 30V V(BR)DSS | 4.9A I(D) | SO |
| GF6968A | TRANSISTOR | MOSFET | COMMON DRAIN | N-CHANNEL | 20V V(BR)DSS | 6.2A I(D) | TSSOP |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GF4450\5B | 功能描述:MOSFET SO-8 N-CH 60V 7.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| GF467AF | 制造商:ELC 功能描述:FUNCTION GENERATOR 3MHZ 制造商:ELC 功能描述:FUNCTION GENERATOR, 3MHZ |
| GF467F | 制造商:ELC 功能描述:FUNCTION GENERATOR 5MHZ+COUNTER |
| GF4800\5B | 功能描述:MOSFET USE 781-SI4800DY RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| GF4810 | 制造商:Vishay Semiconductors 功能描述:10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
發布緊急采購，3分鐘左右您將得到回復。