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參數資料
| 型號： | GF9410 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 7A條（?。﹟蘇 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 153K |
| 代理商： | GF9410 |
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low
On-Resistance
Specially Designed for Low Voltage DC/DC
Converters
Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
±
20
V
Gate-Source Voltage
V
GS
Continuous Drain Current
T
J
= 150°C
(1)
T
A
= 25°C
T
A
= 70°C
I
D
7
5.8
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
(1)
I
DM
30
I
S
2
Maximum Power Dissipation
(1)
T
A
= 25°C
T
A
= 70°C
P
D
2.5
1.6
W
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
(1)
Thermal Resistance
T
J
, T
stg
–55 to 150
°C
R
θ
JA
50
°C/W
Mechanical Data
Case:
SO-8 molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position:
Any
Weight:
0.5g
GF9410
N-Channel Enhancement-Mode MOSFET
V
DS
30V
R
DS(ON)
30
m
I
D
7A
7/10/01
5
1
4
0.244 (6.20)
0.228 (5.79)
8
0.157 (3.99)
0.150 (3.81)
0.020 (0.51)
0.013 (0.33)
0.050 (1.27)
0.009 (0.23)
0.004 (0.10)
0.197 (5.00)
0.189 (4.80)
0.069 (1.75)
0.053 (1.35)
0.019 (0.48)
°
0
°
–
8
°
0.050(1.27)
0.016 (0.41)
0.009 (0.23)
0.007 (0.18)
Dimensions in inches
and (millimeters)
SO-8
T
RENCH
G
EN
F
ET
0.245 (6.22)
Min.
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
0.165 (4.19)
0.155 (3.94)
0.05 (1.27)
0.04 (1.02)
Mounting Pad Layout
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相關代理商/技術參數 |
參數描述 |
|---|---|
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