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參數(shù)資料
| 型號(hào)： | GL381 |
| 廠商： | Sharp Corporation |
| 元件分類： | 發(fā)光二極管 |
| 英文描述： | High Output, f 3mm ResinMold Type Infrared Emitting Diode |
| 中文描述： | 高輸出，女3毫米R(shí)esinMold型紅外發(fā)光二極管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 32K |
| 代理商： | GL381 |
*2 For 3 seconds at the position of 2.6mm from the bottom face of resin package.
I
Electro-optical Characteristics
1. Floppy disk drives
2. Optoelectronic switches
3. Infrared applied systems
Parameter
Symbol
I
F
I
FM
V
R
P
T
opr
T
stg
T
sol
Rating
60
1
6
150
- 25 to + 85
- 40 to + 85
260
Unit
mA
A
V
mW
C
C
C
Forward current
*1
Peak forward current
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
*2
Soldering temperature
(Ta = 25C)
(Ta= 25C)
( Unit : mm)
*3 I
E
: Value obtained by converting the value in power of radiant fluxes at the solid angle of 0.01 sr (steradian) the
direction of mechanical axis of the the lens portion into 1 sr of all those emitted from the light emitting diode.
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
”
“
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
(2.54)
Light blue transparent
epoxy resin (
GL380
)
Blue transparent epoxy resin (
GL381
)
0
1
2
3
1
2
1 Anode
2 Cathode
GL380/GL381
GL380/GL381
I
Features
1. High output
(I
E
: MIN. 4.5mW/sr at I
F
= 50mA,
GL380
)
I
Applications
I
Absolute Maximum Ratings
I
Outline Dimensions
2. Compact
φ
3mm resin mold package
3. Narrow beam angle (
θ:
TYP. ± 13)
*1 Pulse width
100
μ
s, Duty ratio = 0.01
<=
High Output,
φ
3mm Resin
Mold Type Infrared Emitting
(I
E
: MIN. 8.5mW/sr at I
F
= 50mA,
GL381
)
Parameter
Symbol
V
F
V
FM
I
R
Conditions
I
F
= 50mA
I
FM
= 0.5A
V
R
= 3V
MIN.
-
-
-
4.5
8.5
-
-
-
-
-
TYP.
1.3
2.2
-
11
20
950
45
70
300
± 13
MAX.
1.5
3.5
10
-
-
-
-
-
-
-
Unit
V
V
μ
A
Forward voltage
Peak forward voltage
Reverse current
GL380
GL381
I
E
I
F
= 50mA
mW/sr
Peak emission wavelength
Half intensity wavelength
Terminal capacitance
Response frequency
Half intensity angle
λ
P
λ
C
t
f
C
θ
I
F
= 5mA
I
F
= 5mA
V
R
= 0, f= 1MHz
nm
nm
pF
kHz
I
F
= 20mA
*3
Radiant intensity
Diode
φ
3.8
φ
3.0
±
0.15
0
M
5
±
1
±
2
-
0.5
+
0.15
-
0.1
0
2
-
+
-
M
*
Tolerance
: ±
0.2mm
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