欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: GL4800
廠商: Sharp Corporation
元件分類: 發(fā)光二極管
英文描述: Thin Type Infrared Emitting Diode
中文描述: 薄型紅外發(fā)光二極管
文件頁數(shù): 1/3頁
文件大?。?/td> 33K
代理商: GL4800
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
GL4800
I
Features
1. Thin type (Thickness : 1.5mm)
2. Beam angle (
θ:
TYP. ± 30)
3. Radiant flux
(
Φ
e
: MIN. 0.7mW at I
F
= 20mA)
4. Epoxy resin package
I
Applications
1. Floppy disk drives
2. Optoelectronic switches
*1 Pulse width<=100
μ
s, Duty ratio= 0.01
*2 For 3 seconds at the position of 1.8mm from the surface of resin edge.
Parameter
Symbol
P
I
F
I
FM
V
R
T
opr
T
stg
T
sol
Rating
75
50
1
6
- 25 to + 85
- 40 to + 85
260
Unit
mW
mA
A
V
C
C
C
Power dissipation
Forward current
*1
Peak forward current
Reverse voltage
Operating temperature
Storage temperature
*2
Soldering temperature
GL4800
1.6
0
1
1
0
1
M
2.54
0.8
0.7
2
-
C0.5
I
Outline Dimensions
(Unit : mm )
(Ta= 25C)
I
Absolute Maximum Ratings
0.25
1
2
2
1
P
Parameter
Conditions
I
F
= 20mA
I
FM
= 0.5A
V
R
= 3V
V
R
= 0, f= 1MHz
MIN.
-
-
-
-
-
0.7
-
-
TYP.
1.2
3.0
-
70
300
1.6
950
45
MAX.
1.4
4.0
10
-
-
3.0
-
-
Unit
V
V
μ
A
pF
kHz
mW
nm
nm
Forward voltage
Peak forward voltage
Reverse current
Terminal capacitance
Frequency response
Radiant flux
Peak emission wavelength
Half intensity wavelength
-
I
Electro-optical Characteristics
(Ta= 25C)
I
F
= 20mA
I
F
= 5mA
I
F
= 5mA
Symbol
V
F
V
FM
I
R
C
t
f
c
Φ
e
λ
p
λ
R
Pink transparent
epoxy resin
1 Anode
2 Cathode
Diode
Thin Type Infrared Emitting
φ
0.8
3.0
±
0.2
1.5
±
0.2
3
±
1
±
2
-
0.45
2
-
0.9
0
M
相關(guān)PDF資料
PDF描述
GL480 Infrared Emitting Diode
GL480Q Infrared Emitting Diode
GL483Q Infrared Emitting Diode
GL4910 Side View Type Infrared Emitting Diode for Camera AF (Automatic Focusing)
GL496 High Speed Infrared Emitting Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GL4800E0000F 功能描述:紅外發(fā)射源 Thru hole thin IRED 30 0.7mW 950 nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
GL480E00000F 功能描述:紅外發(fā)射源 Thru hole IRED 0.7mW 950nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
GL480-E00000F 制造商:Sharp Microelectronics 功能描述:LED IrLED 950nm 2-Pin
GL480E0000F5 制造商:Sharp Microelectronics Corporation 功能描述:Opto,Em. infrared diode,950nm,side view
GL480Q 制造商:Sharp Microelectronics Corporation 功能描述:1.6 mm, 1 ELEMENT, INFRARED LED, 950 nm
主站蜘蛛池模板: 雷波县| 西宁市| 红安县| 土默特左旗| 涿州市| 宁化县| 稻城县| 青河县| 阜宁县| 贡山| 新丰县| 菏泽市| 杂多县| 遂川县| 金华市| 马鞍山市| 武义县| 墨竹工卡县| 乾安县| 安徽省| 遵化市| 黄山市| 宁强县| 资兴市| 平山县| 开化县| 西充县| 七台河市| 霞浦县| 扶沟县| 榆社县| 利津县| 金坛市| 门头沟区| 扎兰屯市| 高清| 浏阳市| 桐乡市| 凌云县| 延寿县| 乌海市|