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參數(shù)資料
| 型號(hào)： | GL537 |
| 廠商： | Sharp Corporation |
| 元件分類： | 發(fā)光二極管 |
| 英文描述： | フ 5mm Resin Mold Type Infrared Emitting Diode |
| 中文描述： | フ毫米樹脂模具類型紅外線發(fā)光二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 37K |
| 代理商： | GL537 |
*1 Pulse width<=100
μ
s, Duty ratio= 0.01
*2 For 3 seconds at the position of 2.6mm from the bottom face of resin package.
GL537/GL538
GL537/GL538
Emitting Diode
I
Features
1. High output power
2. Beam angle
GL538
θ :
TYP. ± 13
GL537
θ :
TYP. ± 25
3.
φ
5mm epoxy resin package
I
Applications
1. Infrared remote controllers for TVs,
VCRs, audio equipment and air condi-
tioners
I
E
: TYP. 30mW/sr at I
F
= 50mA
Parameter
Symbol
P
I
F
I
FM
Rating
150
100
1
6
- 25 to + 85
- 40 to + 85
260
Unit
mW
mA
A
V
C
C
C
V
R
T
opr
T
stg
T
sol
0.5
0
Anode
Cathode
*
GL537
GL538
I
Absolute Maximum Ratings
(Ta= 25C)
I
Outline Dimensions
(Unit : mm )
I
Electro-optical Characteristics
(Ta= 25C)
Power dissipation
Forward current
Peak forward current
*1
Reverse voltage
Operating temperature
Storage temperature
*2
Soldering temperature
in the direction of mechanical axis of the lens portion into 1 sr of all those emitted from the light emitting diode.
0
(2.54)
0.8
Blue transparent epoxy resin
*
Portion dimension (mm)
Cutting type
GL538
1
2
1
2
1
2
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
”
“
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
Parameter
Conditions
I
F
= 50mA
I
FM
= 0.5A
MIN.
-
-
-
-
-
6
TYP.
1.3
1.9
MAX.
1.5
3.0
Unit
V
V
μ
A
nm
nm
Forward voltage
Peak forward voltage
Reverse current
Peak emission wavelength
Half intensity wavelength
-
10
-
-
Terminal capacitance
Response frequency
-
-
-
-
50
300
± 25
± 13
pF
kHz
-
-
-
-
*3
Radiation intensity
GL537
GL538
13
30
-
-
-
mW/sr
15
950
45
GL537
GL538
Symbol
V
F
V
FM
I
R
λ
P
λ
C
t
f
c
I
E
θ
V
R
= 3V
I
F
= 5mA
I
F
= 5mA
V
R
= 0, f= 1kHz
I
F
= 50mA
(GL538)
Half intensity angle
: Value obtained by converting the value in power of radiant fluxes emitted at the solid angle of 0.01 sr (steradian)
I
F
= 20mA
φ
5mm Resin Mold Type Infrared
*3 I
E
φ
5
2
±
P
M
0
M
φ
±
7.7
±
0.2
8.4
±
0.2
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PDF描述 |
|---|---|
| GL538 | フ 5mm Resin Mold Type Infrared Emitting Diode |
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| GL551 | High Speed Infrared Emitting Diode |
| GL560 | Low Peak Forward Voltage Type フ 5 Resin Mold Package Infrared Emitting Diodes |
| GL561 | Low Peak Forward Voltage Type フ 5 Resin Mold Package Infrared Emitting Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GL538 | 功能描述:紅外發(fā)射源 Thru hole IRED 15mW 950nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| GL538Q | 制造商:Sharp Microelectronics 功能描述:LED IrLED 950nm |
| GL5401 | 制造商:GTM 制造商全稱:GTM 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR |
| GL550 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:High Speed Infrared Emitting Diode |
| GL551 | 功能描述:EMITTER IR 880NM 10MW 5MM T/H RoHS:是 類別:光電元件 >> 紅外發(fā)射極 系列:- 標(biāo)準(zhǔn)包裝:1,200 系列:- 電流 - DC 正向(If):100mA 輻射強(qiáng)度(le)最小值@正向電流:27mW/sr @ 100mA 波長:940nm 正向電壓:1.6V 視角:40° 方向:頂視圖 安裝類型:通孔 封裝/外殼:徑向 包裝:帶卷 (TR) |
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