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參數(shù)資料
| 型號(hào)： | GL610T |
| 廠商： | Sharp Corporation |
| 元件分類： | 發(fā)光二極管 |
| 英文描述： | Ultra-compact Chip Part Type Infrared Emitting Diodes |
| 中文描述： | 超小型芯片的一部分型紅外發(fā)光二極管 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 16K |
| 代理商： | GL610T |
(Ta=25C)
I
F
I
FM
V
R
P
T
opr
T
stg
T
sol
50
500
mA
mA
V
mW
C
C
C
260
6
Features
1. Ultra-compact type (1.6 x0.8 x 0.8 mm)
2. Thin type (thickness : 0.8 mm)
3. Taped-packed type (4,000 pieces/reel)
Applications
Parameter
Symbol
Rating
Unit
Forward current
Peak forward current
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
Soldering temperature
*1
*2
- 25 to + 85
- 25 to + 100
*1 Pulse width <= 100
μ
s, Duty ratio=0.01
*2 Hand soldering temperature, for MAX. 3 seconds
Outline Dimensions
(Unit : mm)
Absolute Maximum Ratings
GL610T
GL610T
Ultra-compact Chip Part Type
Infrared Emitting Diodes
4. Leadless type
1. Compact and thin remote controllers
2. Tape end detection of VCRs and VCR cameras
3. Power source for car navigator touch panels
4. Other portable equipment
150
V
F
V
FM
I
R
Φ
e
λ
p
f
c
I
F
I
FM
= 0.5A
V
R
= 3V
I
F
= 20mA
I
F
= 20mA
I
F
I
F
= 20mA
(Ta=25 C)
-
-
-
V
V
μ
A
mW
nm
-
10
-
-
950
-
-
nm
-
-
300
± 60
-
-
Z
kH
Electro-optical Characteristics
Parameter
Symbol
Conditions
= 50mA
MIN.
TYP.
1.3
2.2
MAX.
1.5
3.5
Unit
Reverse current
Radiant flux
Peak emission wavelength
Half intensity wavelength
Response frequency
Half intensity angle
= 20mA
-
-
0.7
*1
Forward voltage
Peak forward voltage
2.0
40
λ
θ
1 Anode
2 Cathode
*
Plating area
*
Terminal connection
1.6
(0.2)
0.8
0.3
1
2
Chip position
0
1.2
1.0
0
0
(0.3)
(0.3)
Chip side mark
1
2
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
”
“
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
I
I
I
I
I
*
Tolerance
: ±
0.1mm
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