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參數資料
型號: GP1S097HCZ0F
廠商: Sharp Microelectronics
文件頁數: 6/9頁
文件大小: 133K
描述: SENSOR OPTO SLOT 2MM TRANS THRU
產品變化通告: Internal Chip Change 04/May/2007
標準包裝: 100
檢測距離: 0.079"(2mm)
檢測方法: 可傳導的
輸出配置: 光電晶體管
電流 - DC 正向(If): 50mA
電流 - 集電極 (Ic)(最大): 20mA
電壓 - 集電極發射極擊穿(最大): 35V
響應時間: 50µs,50µs
安裝類型: 通孔
封裝/外殼: PCB 安裝
包裝: 管件
類型: 無放大
工作溫度: -25°C ~ 85°C
產品目錄頁面: 2776 (CN2011-ZH PDF)
其它名稱: 425-1966-5
6
Sheet No.: D3-A01201EN
GP1S097HCZ0F
?SPAN class="pst GP1S097HCZ0F_2586155_4">Design Considerations
?/DIV>
Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Position of opaque board
Opaque board shall be installed at place 1.6mm or more from the top of elements.
(Example)
This product is not designed against irradiation and incorporates non-coherent IRED.
?/DIV>
Degradation
In general, the emission of the IRED used in photointerrupter will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
?/DIV>
Parts
This product is assembled using the below parts.
  " Photodetector (qty. : 1)
Category
Material
Maximum Sensitivity
wavelength (nm)
Sensitivity
wavelength (nm)
Response time (約)
Phototransistor   Silicon (Si)
930
700 to 1 200
20
  " Photo emitter (qty. : 1)
Category
Material
Maximum light emitting
wavelength (nm)
I/O Frequency (MHz)
Infrared emitting diode
(non-coherent)
Gallium arsenide (GaAs)
950
0.3
  " Material
Case
Lead frame
Lead frame plating
Black polyphernylene
sul de resin (UL94 V-0)
42Alloy
SnCu plating
1.6mm or more
1.6mm or more
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