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參數資料
| 型號： | GP250MHB06S |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Half Bridge IGBT Module |
| 中文描述： | 350 A, 600 V, N-CHANNEL IGBT |
| 文件頁數： | 1/10頁 |
| 文件大小： | 127K |
| 代理商： | GP250MHB06S |
GP250MHB06S
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10
KEY PARAMETERS
V
CES
V
CE(sat)
I
C25
I
C75
I
C(PK)
600V
(typ)
2.2V
(max) 350A
(max) 250A
(max) 700A
FEATURES
I
n - Channel
I
High Switching Speed
I
Low Forward Voltage Drop
I
Isolated Base
APPLICATIONS
I
PWM Motor Contro
l
I
UPS
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The GP250MHB06S is a half bridge 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
ORDERING INFORMATION
Order as:
GP250MHB06S
Note: When ordering, use complete part number.
GP250MHB06S
Half Bridge IGBT Module
Replaces January 2000 version, DS4325 - 5.0
DS4325-6.0 October 2001
1
2
3
11
10
8
9
5
4
6
7
3(C
1
)
2(E
2
)
1(E
1
C
2
)
11(C
2
)
9(C
1
)
6(G
2
)
7(E
2
)
5(E
1
)
4(G
1
)
Fig. 1 Half bridge circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code:
M
(See package details for further information)
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