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參數資料
| 型號： | GP801DDS18 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual Switch Low VCE(SAT) IGBT Module |
| 中文描述： | 800 A, 1800 V, N-CHANNEL IGBT |
| 文件頁數： | 1/10頁 |
| 文件大小： | 158K |
| 代理商： | GP801DDS18 |
GP801DCM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10
FEATURES
I
Low V
CE(SAT)
I
800A Per Module
I
High Thermal Cycling Capability
I
Non Punch Through Silicon
I
Isolated MMC Base with AlN Substrates
APPLICATIONS
I
High Reliability
I
Motor Controllers
I
Traction Drives
I
Low Loss System Retrofit
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP801DCM18 is an 1800V, n channel enhancement
mode, insulated gate bipolar transistor (IGBT) chopper module.
Designed with low V
to minimise conduction losses, the
module is of particular relevance in low to medium frequency
applications. The IGBT has a wide reverse bias safe operating
area (RBSOA) ensuring reliability in demanding applications.
This device is optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP801DCM18
Note: When ordering, please use the complete part number.
KEY PARAMETERS
V
CES
V
CE(sat)
I
C
I
C(PK)
1800V
2.6V
800A
1600A
(typ)
(max)
(max)
GP801DCM18
Hi-Reliability Chopper Switch Low V
CE(SAT)
IGBT Module
DS5365-3.0 January 2001
Fig. 1 Dual switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code:
D
(See Package Details for further information)
3(C
1
)
4(E
2
)
2(C
2
)
7(C
1
)
5(E
1
)
6(G
1
)
1(E
1
)
GPxxxDCxxx-xxx
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相關代理商/技術參數 |
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|---|---|
| GP801FSM18 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Hi-Reliability Single Switch Low VCE(SAT) IGBT Module |
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