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參數資料
| 型號： | GS-F8MB-SIMM |
| 廠商： | 意法半導體 |
| 英文描述： | 8MByte SIMM Flash Memory Module(8M字節SIMM閃速存儲器模塊) |
| 中文描述： | 8MByte上海藥物研究所閃存模塊（上海藥物研究所800萬字節閃速存儲器模塊） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 46K |
| 代理商： | GS-F8MB-SIMM |
GS-F8MB-SIMM
8 MByte SIMM FLASH MEMORY MODULE
PRELIMINARY DATA
80 PINS JEDEC 21-C package
FAST ACCESS TIME: 70ns
5V
±
10% SUPPLY VOLTAGE for PROGRAM
and ERASE OPERATIONS
5V
±
10% SUPPLY VOLTAGE in READ
OPERATIONS
BYTE PROGRAMMING TIME: 10
μ
s typical
ERASE TIME
– Sector: 1.0 sec typical
– Bulk: 2.5 sec typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Data Polling and Toggle Protocol for P/E.C.
Status
MEMORY ERASE in SECTORS
– 8 Sectors of 64K Bytes each
– Sector Protection
– Multisector Erase
ERASE SUSPEND and RESUME MODES
100,000 PROGRAM/ERASE CYCLES per
SECTOR
A0-A18
Address Inputs
DQ0-DQ31
Data Input / Outputs
CE0-CE3
Chip Enable
OE
Output Enable
WE0-WE3
Write Enable
PD1-PD4
Presence & Module Type Detect
PD5-PD7
Module Speed Detect
VCC-VSS
Power Supply - Ground
Table 1. Signal Names
40
41
80
1
January 1997
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/4
DESCRIPTION
The GS-F8MB-SIMM is an 8 Mbyte SIMM memory
module built around 16 x M29F040 FLASH mem-
ory chips (please see relevant data sheet for all
detailed informations about the chip perform-
ances). The devices are mounted on a Jedec 21-C
standardized SIMM printed circuit.
Organisation
Figure 1 shows the block diagram. The FLASH
module is organized as 16 x 512K x 8 bits with
address lines A0-A18 and Data Inputs/Outputs
DQ0 to 7, DQ8 to 15, DQ16 to 23 and DQ24 to 31.
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