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參數(shù)資料
| 型號： | GS73024AB-12 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | Asynchronous SRAM |
| 中文描述： | 128K X 24 STANDARD SRAM, 12 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 452K |
| 代理商： | GS73024AB-12 |
Truth Table
CE
OE
WE
Mode
DQ0 to DQ23
V
DD
Current
H
X
X
Not selected
High Z
ISB1, ISB2
L
L
H
Read
Data Out
I
DD
L
X
L
Write
Data In
L
H
H
Output disable
High Z
GS73024AB
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 12/2005
3/12
2003, GSI Technology
X: “H” or “L”
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
V
DD
–0.5 to +4.6
V
Input Voltage
V
IN
–0.5 to V
DD
+0.5
(
≤
4.6 V max.)
V
Output Voltage
V
OUT
–0.5 to V
DD
+0.5
(
≤
4.6 V max.)
V
Allowable BGA power dissipation
PD
1.5
W
Storage temperature
T
STG
–55 to 150
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS73024AB-12I | Asynchronous SRAM |
| GS73024AB-8 | Asynchronous SRAM |
| GS73024AB-8I | Asynchronous SRAM |
| GS73024B-15I | 128K X 24 3MB ASYNCHRONOUS SRAM |
| GS73024B | 128K X 24 3MB ASYNCHRONOUS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS73024AB-12I | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 3MBIT 128KX24 12NS 119FBGA - Trays |
| GS73024AB-8 | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 3MBIT 128KX24 8NS 119FBGA - Trays |
| GS73024AB-8I | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 3MBIT 128KX24 8NS 119FBGA - Trays |
| GS73024AGB-10 | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 3MBIT 128KX24 10NS 119FBGA - Trays |
| GS73024AGB-10I | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 3MBIT 128KX24 10NS 119FBGA - Trays 制造商:GSI Technology 功能描述:IC 3MB ASYNCH SRAM 128K X 24 10NS |
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