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參數資料
| 型號： | GS74104 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 4Mb（1M x 4Bit）Asynchronous SRAM(4M位（1M x 4位）異步靜態RAM) |
| 中文描述： | 4Mb的（1米x 4位）異步SRAM（4分位（1米× 4位）異步靜態RAM）的 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 407K |
| 代理商： | GS74104 |
Rev: 1.07 1/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
1/12
1999, Giga Semiconductor, Inc.
GS74104TP/J
1M x 4
4Mb Asynchronous SRAM
8, 10, 12, 15 ns
3.3 V V
DD
Center V
DD
and V
SS
SOJ, TSOP
Commercial Temp
Industrial Temp
Features
Fast access time: 8, 10, 12, 15 ns
CMOS low power operation: 150/125/110/90 mA at
minimum cycle time.
Single 3.3 V ± 0.3 V power supply
All inputs and outputs are TTL-compatible
Fully static operation
Industrial Temperature Option: –40° to 85°C
Package line up
J: 400 mil, 32-pin SOJ package
TP: 400 mil, 44-pin TSOP Type II package
Description
The GS74104 is a high speed CMOS Static RAM organized as
1,048,576 words by 4 bits. Static design eliminates the need for
external clocks or timing strobes. The GS operates on a single
3.3 V power supply and all inputs and outputs are TTL-com-
patible. The GS74104 is available in 400 mil SOJ and 400 mil
TSOP Type-II packages.
Pin Descriptions
Symbol
SOJ 1M x 4-Pin Configuraton
TSOP-II 1M x 4-Pin Configuration
Description
Address input
Data input/output
Chip enable input
Write enable input
Output enable input
A
0
–A
19
DQ
1
–DQ
4
CE
WE
OE
V
DD
V
SS
NC
+3.3 V power supply
Ground
No connect
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A
4
A
3
A
2
A
1
A
0
CE
DQ
1
V
DD
V
SS
DQ
2
WE
A
19
A
18
A
17
A
16
A
15
A
5
A
6
A
7
A
8
A
9
OE
DQ
4
V
SS
V
DD
DQ
3
A
10
A
11
A
12
A
13
A
14
NC
32-pin
400 mil SOJ
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
NC
A
4
A
3
A
2
A
1
A
0
CE
DQ
1
V
DD
V
SS
DQ
2
WE
A
19
A
18
A
17
A
16
NC
A
5
A
6
A
7
A
8
A
9
OE
DQ
4
V
SS
V
DD
DQ
3
A
10
A
11
A
12
A
13
A
14
NC
NC
44-pin
400 mil TSOP II
19
20
A
15
NC
21
22
NC
NC
24
23
NC
NC
1
2
NC
NC
44
43
NC
NC
相關PDF資料 |
PDF描述 |
|---|---|
| GS74108J | 512K x 8 4Mb Asynchronous SRAM |
| GS74108J-10 | 512K x 8 4Mb Asynchronous SRAM |
| GS74108J-10I | 512K x 8 4Mb Asynchronous SRAM |
| GS74108J-12 | 512K x 8 4Mb Asynchronous SRAM |
| GS74108J-12I | 512K x 8 4Mb Asynchronous SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS74104AGJ-10 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 4 4Mb Asynchronous SRAM |
| GS74104AGJ-10I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 4 4Mb Asynchronous SRAM |
| GS74104AGJ-12 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 4 4Mb Asynchronous SRAM |
| GS74104AGJ-12I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 4 4Mb Asynchronous SRAM |
| GS74104AGJ-8 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 4 4Mb Asynchronous SRAM |
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