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參數資料
| 型號： | GS78116B-15T |
| 英文描述： | x16 SRAM |
| 中文描述： | x16的SRAM |
| 文件頁數： | 1/11頁 |
| 文件大小： | 369K |
| 代理商： | GS78116B-15T |
Rev: 1.02 9/2001
For latest documentation see http://www.gsitechnology.com.
1/11
1999, Giga Semiconductor, Inc.
GS78116B
512K x 16
8Mb Asynchronous SRAM
10, 12, 15 ns
3.3 V V
DD
BGA
Commercial Temp
Industrial Temp
Features
Fast access time: 10, 12, 15 ns
CMOS low power operation: 300/250/220/180 mA at
minimum cycle time
Single 3.3 V ± 0.3 V power supply
All inputs and outputs are TTL-compatible
Fully static operation
Industrial Temperature Option: –40° to 85°C
14 mm x 22 mm, 119-Bump, 1.27 mm Pitch Ball Grid Array
package
Description
The GS78116 is a high speed CMOS static RAM organized as
524,288-words by 16-bits. Static design eliminates the need for
external clocks or timing strobes. The GS78116 operates on a
single 3.3 V power supply and all inputs and outputs are TTL-
compatible. The GS78116 is available in 14 mm x 22 mm
BGA package.
Pin Descriptions
Symbol
A
0
to A
18
DQ
1
to DQ
16
Description
Address input
Data input/output
Chip enable input
Write enable input
Output enable input
CE
WE
OE
V
DD
V
SS
NC
+3.3 V power supply
Ground
No connect
Memory Array
Row
Decoder
Column
Decoder
Address
Input
Buffer
Control
I/O Buffer
A
0
CE
WE
OE
DQ
1
A
18
Block Diagram
DQ
16
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