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參數(shù)資料
| 型號： | GS8161E18BGD-150IV |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| 中文描述： | 1M X 18 CACHE SRAM, 7.5 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 |
| 文件頁數(shù)： | 1/35頁 |
| 文件大小： | 779K |
| 代理商： | GS8161E18BGD-150IV |
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GS8161ExxB(T/D)-xxxV
1M x 18, 512K x 36, 512K x 36
18Mb Sync Burst SRAMs
250 MHz
–
150 MHz
1.8 V or 2.5 V V
DD
1.8 V or 2.5 V I/O
100-Pin TQFP & 165-Bump BGA
Commercial Temp
Industrial Temp
Preliminary
Rev: 1.01a 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
1/35
2004, GSI Technology
Features
FT pin for user-configurable flow through or pipeline
operation
Dual Cycle Deselect (DCD) operation
IEEE 1149.1 JTAG-compatible Boundary Scan
1.8 V or 2.5 V core power supply
1.8 V or 2.5 V I/O supply
LBO pin for Linear or Interleaved Burst mode
Internal input resistors on mode pins allow floating mode pins
Default to Interleaved Pipeline mode
Byte Write (BW) and/or Global Write (GW) operation
Internal self-timed write cycle
Automatic power-down for portable applications
JEDEC-standard 100-lead TQFP and 165 BGA packages
RoHS-compliant 100-lead TQFP and 165 BGA packages
available
Functional Description
Applications
The
GS8161ExxB(T/D)-xxxV
is a 18,874,368-bit high
performance synchronous SRAM with a 2-bit burst address
counter. Although of a type originally developed for Level 2
Cache applications supporting high performance CPUs, the device
now finds application in synchronous SRAM applications, ranging
from DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV) and write control inputs (Bx, BW,
GW) are synchronous and are controlled by a positive-edge-
triggered clock input (CK). Output enable (G) and power down
control (ZZ) are asynchronous inputs. Burst cycles can be initiated
with either ADSP or ADSC inputs. In Burst mode, subsequent
burst addresses are generated internally and are controlled by
ADV. The burst address counter may be configured to count in
either linear or interleave order with the Linear Burst Order (LBO)
input. The Burst function need not be used. New addresses can be
loaded on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the
user via the FT mode pin (Pin 14). Holding the FT mode pin low
places the RAM in Flow Through mode, causing output data to
bypass the Data Output Register. Holding FT high places the
RAM in Pipeline mode, activating the rising-edge-triggered Data
Output Register.
DCD Pipelined Reads
The
GS8161ExxB(T/D)-xxxV
is a DCD (Dual Cycle Deselect)
pipelined synchronous SRAM. SCD (Single Cycle Deselect)
versions are also available. DCD SRAMs pipeline disable
commands to the same degree as read commands. DCD RAMs
hold the deselect command for one full cycle and then begin
turning off their outputs just after the second rising edge of clock.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write control
inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High)
of the ZZ signal, or by stopping the clock (CK). Memory data is
retained during Sleep mode.
Core and Interface Voltages
The
GS8161ExxB(T/D)-xxxV
operates on a 1.8 V or 2.5 V power
supply. All inputs are 1.8 V or 2.5 V compatible. Separate output
power (V
DDQ
) pins are used to decouple output noise from the
internal circuits and are 1..8 V or 2.5 V compatible.
Parameter Synopsis
-250
3.0
4.0
-200
3.0
5.0
-150
3.8
6.7
Unit
ns
ns
Pipeline
3-1-1-1
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
280
330
230
270
185
210
mA
mA
Flow Through
2-1-1-1
5.5
5.5
210
240
6.5
6.5
185
205
7.5
7.5
170
190
ns
ns
mA
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8161E18BGD-150V | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18BGD-200IV | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18BGD-200V | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18BGD-250IV | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18BGD-250V | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8161E18BGD-150V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18BGD-200 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18BGD-200I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18BGD-200IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18BGD-200V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
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