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參數資料
| 型號： | GS8161E18T-200 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Quad 2-input Exclusive-OR gates 14-SO 0 to 70 |
| 中文描述： | 100萬× 18，512k × 32的，為512k × 36 35.7同步突發靜態存儲器 |
| 文件頁數： | 1/36頁 |
| 文件大小： | 939K |
| 代理商： | GS8161E18T-200 |
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GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D)
18Mb Pipelined and Flow Through
Synchronous NBT SRAM
250 MHz–133 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
100-Pin TQFP
Commercial Temp
Industrial Temp
Rev: 2.15 11/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
1/36
1998, GSI Technology
Features
User-configurable Pipeline and Flow Through mode
NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization
Fully pin-compatible with both pipelined and flow through
NtRAM, NoBL and ZBT SRAMs
IEEE 1149.1 JTAG-compatible Boundary Scan
2.5 V or 3.3 V +10%/–10% core power supply
LBO pin for Linear or Interleave Burst mode
Pin-compatible with 2M, 4M, and 8M devices
Byte write operation (9-bit Bytes)
3 chip enable signals for easy depth expansion
ZZ pin for automatic power-down
JEDEC-standard 100-lead TQFP and 165-bump FP-BGA
packages
Functional Description
The GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D) is an
18Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like
ZBT, NtRAM, NoBL or other pipelined read/double late write
or flow through read/single late write SRAMs, allow
utilization of all available bus bandwidth by eliminating the
need to insert deselect cycles when the device is switched from
read to write cycles.
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable, ZZ and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D) may
be configured by the user to operate in Pipeline or Flow
Through mode. Operating as a pipelined synchronous device,
in addition to the rising-edge-triggered registers that capture
input signals, the device incorporates a rising-edge-triggered
output register. For read cycles, pipelined SRAM output data is
temporarily stored by the edge triggered output register during
the access cycle and then released to the output drivers at the
next rising edge of clock.
The GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D) is
implemented with GSI's high performance CMOS technology
and is available in JEDEC-standard 100-pin TQFP and
165-bump FP-BGA packages.
Parameter Synopsis
-250 -225 -200 -166 -150 -133 Unit
2.5
4.0
4.4
5.0
6.0
280
330
300
270
230
275
320
295
265
225
Pipeline
3-1-1-1
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
Curr
(x18)
Curr
(x32/x36)
2.7
3.0
3.4
3.8
6.7
185
215
180
210
4.0
7.5
165
190
165
185
ns
ns
mA
mA
mA
mA
3.3 V
255
230
200
2.5 V
250
230
195
Flow
Through
2-1-1-1
t
KQ
tCycle
5.5
5.5
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.5
8.5
ns
ns
3.3 V
Curr
(x18)
Curr
(x32/x36)
Curr
(x18)
Curr
(x32/x36)
175
200
175
200
165
190
165
190
160
180
160
180
150
170
150
170
145
165
145
165
135
150
135
150
mA
mA
mA
mA
2.5 V
相關PDF資料 |
PDF描述 |
|---|---|
| GS8161E18T-200I | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-225 | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-225I | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-250 | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-250I | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8161E18T-200I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-225 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-225I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
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