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參數(shù)資料
| 型號(hào)： | GS8161FZ36BGD-5.5 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 18Mb Flow Through Synchronous NBT SRAM |
| 中文描述： | 512K X 36 ZBT SRAM, 5.5 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 |
| 文件頁(yè)數(shù)： | 1/28頁(yè) |
| 文件大小： | 629K |
| 代理商： | GS8161FZ36BGD-5.5 |
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GS8161FZ18/32/36BD
18Mb Flow Through
Synchronous NBT SRAM
5.5 ns–7.5 ns
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
165-Bump BGA
Commercial Temp
Industrial Temp
Rev: 1.00 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
1/28
2006, GSI Technology
Features
Flow Through mode
NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization
Fully pin-compatible with flow through NtRAM, NoBL
and ZBT SRAMs
IEEE 1149.1 JTAG-compatible Boundary Scan
2.5 V or 3.3 V +10%/–10% core power supply
LBO pin for Linear or Interleave Burst mode
Pin-compatible with 2M, 4M, and 8M devices
Byte write operation (9-bit Bytes)
3 chip enable signals for easy depth expansion
ZZ pin for automatic power-down
JEDEC-standard 165-bump FP-BGA package
RoHS-compliant 165-bump BGA package available
Functional Description
The GS8161FZ18/32/36BD is an 18Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other flow through read/single late write SRAMs, allow
utilization of all available bus bandwidth by eliminating the
need to insert deselect cycles when the device is switched from
read to write cycles.
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable, ZZ and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8161FZ18/32/36BD is configured to operate in Flow
Through mode.
The GS8161FZ18/32/36BDis implemented with GSI's high
performance CMOS technology and is available in JEDEC-
standard 165-bump FP-BGA package.
Parameter Synopsis
-5.5
-6.5
-7.5
Unit
Flow Through
2-1-1-1
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
5.5
5.5
6.5
6.5
7.5
7.5
ns
ns
225
255
200
220
185
205
mA
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8161FZ36BGD-5.5I | 18Mb Flow Through Synchronous NBT SRAM |
| GS8161FZ36BGD-6.5 | 18Mb Flow Through Synchronous NBT SRAM |
| GS8161FZ36BGD-6.5I | 18Mb Flow Through Synchronous NBT SRAM |
| GS8161FZ36BGD-7.5 | 18Mb Flow Through Synchronous NBT SRAM |
| GS8161FZ36BGD-7.5I | 18Mb Flow Through Synchronous NBT SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8161FZ36BGD-6.5 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Flow Through Synchronous NBT SRAM |
| GS8161FZ36BGD-6.5I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Flow Through Synchronous NBT SRAM |
| GS8161FZ36BGD-7.5 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Flow Through Synchronous NBT SRAM |
| GS8161FZ36BGD-7.5I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Flow Through Synchronous NBT SRAM |
| GS8161V18CD | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
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