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參數資料
| 型號： | GS816218B-200 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| 中文描述： | 1M X 18 CACHE SRAM, 6.5 ns, PBGA119 |
| 封裝： | FBGA-119 |
| 文件頁數： | 39/41頁 |
| 文件大小： | 980K |
| 代理商： | GS816218B-200 |
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GS816218(B/D)/GS816236(B/D)/GS816272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.17 11/2004
39/41
1999, GSI Technology
512K x 36
GS816236D-250I
Pipeline/Flow Through
165 BGA (var. 1)
250/5.5
I
512K x 36
GS816236D-225I
Pipeline/Flow Through
165 BGA (var. 1)
225/6
I
512K x 36
GS816236D-200I
Pipeline/Flow Through
165 BGA (var. 1)
200/6.5
I
512K x 36
GS816236D-166I
Pipeline/Flow Through
165 BGA (var. 1)
166/7
I
512K x 36
GS816236D-150I
Pipeline/Flow Through
165 BGA (var. 1)
150/7.5
I
512K x 36
GS816236D-133I
Pipeline/Flow Through
165 BGA (var. 1)
133/8.5
I
256K x 72
GS816272C-200I
Pipeline/Flow Through
209 BGA
200/6.5
I
256K x 72
GS816272C-166I
Pipeline/Flow Through
209 BGA
166/7
I
256K x 72
GS816272C-150I
Pipeline/Flow Through
209 BGA
150/7.5
I
256K x 72
GS816272C-133I
Pipeline/Flow Through
209 BGA
133/8.5
I
18Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
GS816218B-150IB 1.00 9/
1999A;GS816218B-150IB
2.00 1/1999B
Content
Converted from 0.25u 3.3V process to 0.18u 2.5V process.
Master File Rev B
Added x72 Pinout.
Added GSI Logo.
Changed BGA package drawing for 209 pin package.
GS816218B 2.01 1/
2000C;GS816218 B 2.02 1/
2000D
Ordering Information for GSI Synchronous Burst RAMs
Org
Part Number
1
Type
Package
Speed
2
(MHz/ns)
T
A3
Status
Notes:
1.
2.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS816236-200IT.
The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings
3.
4.
相關PDF資料 |
PDF描述 |
|---|---|
| GS816218B-200I | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| GS816218B-225 | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| GS816218B-225I | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| GS816218B-250 | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| GS816218B-250I | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS816218BB-150 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FBGA - Trays |
| GS816218BB-150I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FBGA - Trays |
| GS816218BB-150IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FPBGA - Trays |
| GS816218BB-150V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FPBGA - Trays |
| GS816218BB-200 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 1MX18 6.5NS/3NS 119FBGA - Trays |
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