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參數資料
| 型號： | GS816218BGB-250I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
| 中文描述： | 1M X 18 CACHE SRAM, 5.5 ns, PBGA119 |
| 封裝： | ROHS COMPLIANT, FBGA-119 |
| 文件頁數： | 28/37頁 |
| 文件大小： | 866K |
| 代理商： | GS816218BGB-250I |
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GS816218/36B(B/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 9/2005
28/37
2004, GSI Technology
Typically, the Boundary Scan Register is loaded with the desired pattern of data with the SAMPLE/PRELOAD command.
Then the EXTEST command is used to output the Boundary Scan Register’s contents, in parallel, on the RAM’s data output
drivers on the falling edge of TCK when the controller is in the Update-IR state.
Alternately, the Boundary Scan Register may be loaded in parallel using the EXTEST command. When the EXTEST instruc-
tion is selected, the sate of all the RAM’s input and I/O pins, as well as the default values at Scan Register locations not asso-
ciated with a pin, are transferred in parallel into the Boundary Scan Register on the rising edge of TCK in the Capture-DR
state, the RAM’s output pins drive out the value of the Boundary Scan Register location with which each output pin is associ-
ated.
IDCODE
The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in Capture-DR mode and
places the ID register between the TDI and TDO pins in Shift-DR mode. The IDCODE instruction is the default instruction
loaded in at power up and any time the controller is placed in the Test-Logic-Reset state.
SAMPLE-Z
If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (high-
Z) and the Boundary Scan Register is connected between TDI and TDO when the TAP controller is moved to the Shift-DR
state.
RFU
These instructions are Reserved for Future Use. In this device they replicate the BYPASS instruction.
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PDF描述 |
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| GS816218BGD-150I | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
| GS816218BGD-200 | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
| GS816218BGD-200I | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
| GS816218BGD-250 | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
| GS816218BGD-250I | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS816218BGB-250IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 5.5NS/3NS 119FBGA - Trays |
| GS816218BGB-250V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 5.5NS/2.5NS 119FPBGA - Trays |
| GS816218BGD-150 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 165FBGA - Trays |
| GS816218BGD-150I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 165FBGA - Trays |
| GS816218BGD-150IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 165FPBGA - Trays |
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