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參數(shù)資料
型號(hào): GS816218D-200I
廠商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
中文描述: 1M X 18 CACHE SRAM, 6.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁(yè)數(shù): 14/41頁(yè)
文件大小: 980K
代理商: GS816218D-200I
Tex8adx6prsi hsseiiainaeNtRcmmne o NwDsg.
GS816218(B/D)/GS816236(B/D)/GS816272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.17 11/2004
14/41
1999, GSI Technology
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
W
CR
CW
X
X
W
W
X
X
X
S
S
CR
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and
assumes ADSP is tied high and ADV is tied low.
3.
相關(guān)PDF資料
PDF描述
GS816218D-225 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816218D-225I 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816218D-250 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816218D-250I 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816236B-133 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816218DB-150 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS816218DB-150I 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS816218DB-150IV 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS816218DB-150V 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS816218DB-200 制造商:GSI Technology 功能描述:119 BGA - Bulk
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