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參數資料
| 型號： | GS816236B-133I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| 中文描述： | 512K X 36 CACHE SRAM, 8.5 ns, PBGA119 |
| 封裝： | FBGA-119 |
| 文件頁數： | 40/41頁 |
| 文件大小： | 980K |
| 代理商： | GS816236B-133I |
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Updated Recommended Operating Conditions table (added
V
DDQ
references)
GS816218(B/D)/GS816236(B/D)/GS816272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.17 11/2004
40/41
1999, GSI Technology
GS18/362.0 1/2000DGS18/
362.03 2/2000E
Front page; Features - changed 2.5V I/O supply to 2.5V
paragraph to include information for 3.3V;Completeness
Absolute Maximum Ratings; Changed VDDQ - Value: From: -
.05 to VDD : to : -.05 to 3.6; Completeness.
Recommended Operating Conditions;Changed: I/O Supply
Voltage- Max. from VDD to 3.6; Input High Voltage- Max. from
VDD +0.3 to 3.6; Same page - took out Note 1;Completeness
Electrical Characteristics - Added second Output High Voltage
line to table; completeness.
Note: There was not a Rev 2.02 for the 8160Z or the 8161Z.
Updated pad out and pin description table (7D changed from
NC to GW)
GS18/362.03 2/2000E;
816218_r2_04
Content
816218_r2_04;
816218_r2_05
Content
Updated BGA pin description table to comply with JEDEC
standards
816218_r2_05;
816218_r2_06
Content
Changed the value of ZZ recovery in the AC Electrical
Characteristics table on page 19 from 20 ns to 100 ns
816218_r2_06;
816218_r2_07
Content/Format
Added 225 MHz speed bin
Updated numbers in page 1 table, AC Characteristics table,
and Operating Currents table
Updated format to comply with Technical Publications
standards
Changed V
SSQ
references to V
SS
Changed K4 and K8 in 209-bump BGA to NC
Updated Capitance table—removed Input row and changed
Output row to I/O
Updated numbers for Clock to Output Valid (PL) and Clock to
Output Valid (FT) for 166 MHz and 133 MHz on AC Electrical
Characteristics table
Updated Features list on page 1
Completely reworked table on page 1
Updated Mode Pin Functions table on page 9
Added 3.3 V references to entire document
Updated Operating Conditions table
Updated JTAG section
Updated Boundary Scan Chain table
Updated Operating Currents table and added note
Updated Application Tips paragraph
Update table on page 1; added power numbers
Updated JTAG ID Register table
Updated Synchronous Truth table
Updated Operating Currents table
816218_r2_07;
816218_r2_08
Content
816218_r2_08;
816218_r2_09
Content
816218_r2_09;
816218_r2_10
Content
816218_r2_10;
816218_r2_11
Content
816218_r2_11;
Content
18Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
相關PDF資料 |
PDF描述 |
|---|---|
| GS816236B-150 | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| GS816236B-150I | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| GS816236B-166 | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| GS816236B-166I | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| GS816236B-200 | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS816236BB-150 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 512KX36 7.5NS/3.8NS 119FBGA - Trays |
| GS816236BB-150I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 512KX36 7.5NS/3.8NS 119FBGA - Trays |
| GS816236BB-150IV | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 119FPBGA - Trays |
| GS816236BB-150V | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 119FPBGA - Trays |
| GS816236BB-200 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 512KX36 6.5NS/3NS 119FBGA - Trays |
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