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參數資料
| 型號： | GS816236BD-150I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
| 中文描述： | 512K X 36 CACHE SRAM, 7.5 ns, PBGA165 |
| 封裝： | FBGA-165 |
| 文件頁數： | 14/37頁 |
| 文件大小： | 866K |
| 代理商： | GS816236BD-150I |
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GS816218/36B(B/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 9/2005
14/37
2004, GSI Technology
V
DDQ3
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
2.0
—
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
–
0.3
—
0.8
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
2.0
—
V
DDQ
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
–
0.3
—
0.8
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+1.5 V maximum, with a pulse width not to exceed 50% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
V
DDQ2
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
0.6*V
DD
—
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
–
0.3
—
0.3*V
DD
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
0.6*V
DD
—
V
DDQ
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
–
0.3
—
0.3*V
DD
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+1.5 V maximum, with a pulse width not to exceed 50% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
–
40
25
85
°
C
2
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+1.5 V maximum, with a pulse width not to exceed 50% tKC.
2.
相關PDF資料 |
PDF描述 |
|---|---|
| GS816236BD-200 | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
| GS816236BD-200I | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
| GS816236BD-250 | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
| GS816236BD-250I | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
| GS816236BGB-150 | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS816236BD-150IV | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 165FPBGA - Trays |
| GS816236BD-166M | 制造商:GSI Technology 功能描述:GS816236BD-166M - Trays |
| GS816236BD-180M | 制造商:GSI Technology 功能描述:GS816236BD-180M - Trays |
| GS816236BD-200I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 6.5NS/3NS 165FBGA - Trays |
| GS816236BD-225M | 制造商:GSI Technology 功能描述:GS816236BD-225M - Trays |
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