欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: GS816272C-200
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
中文描述: 256K X 72 CACHE SRAM, 6.5 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁數: 17/41頁
文件大小: 980K
代理商: GS816272C-200
Tex8adx6prsi hsseiiainaeNtRcmmne o NwDsg.
GS816218(B/D)/GS816236(B/D)/GS816272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.17 11/2004
17/41
1999, GSI Technology
V
DDQ3
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
2.0
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
0.3
0.8
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
2.0
V
DDQ
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
0.3
0.8
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
V
DDQ2
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
0.6*V
DD
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
0.3
0.3*V
DD
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
0.6*V
DD
V
DDQ
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
0.3
0.3*V
DD
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
40
25
85
°
C
2
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關PDF資料
PDF描述
GS816272C-200I 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816272CC-150IV 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS816272CC-150V 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS816272CC-200IV 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS816272CC-200V 256K x 72 18Mb S/DCD Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS816272CC-150 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 7.5NS/3.8NS 209FBGA - Trays
GS816272CC-150I 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 7.5NS/3.8NS 209FBGA - Trays
GS816272CC-150IV 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V/2.5V 18MBIT 256KX72 7.5NS/3.8NS 209FBGA - Trays
GS816272CC-150V 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V/2.5V 18MBIT 256KX72 7.5NS/3.8NS 209FBGA - Trays
GS816272CC-200 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 6.5NS/3NS 209FBGA - Trays
主站蜘蛛池模板: 繁昌县| 泗水县| 宁都县| 丰镇市| 光山县| 定陶县| 雅安市| 仙居县| 梨树县| 平乐县| 盐城市| 印江| 招远市| 崇文区| 漳州市| 三台县| 大城县| 濉溪县| 巫溪县| 沙田区| 双辽市| 余姚市| 沭阳县| 遂宁市| 嘉禾县| 理塘县| 绥阳县| 乌恰县| 凤山市| 新源县| 三穗县| 仙居县| 临猗县| 玉树县| 沙坪坝区| 枣庄市| 昭苏县| 永丰县| 甘谷县| 枞阳县| 蒙自县|