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參數(shù)資料
| 型號： | GS816272CC-200IV |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| 中文描述： | 256K X 72 CACHE SRAM, 6.5 ns, PBGA209 |
| 封裝： | 14 X 22 MM, 1 MM PITCH, BGA-209 |
| 文件頁數(shù)： | 11/29頁 |
| 文件大小： | 851K |
| 代理商： | GS816272CC-200IV |
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GS816272CC-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02a 6/2006
11/29
2004, GSI Technology
V
DDQ2
& V
DDQ1
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
0.6*V
DD
—
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
–
0.3
—
0.3*V
DD
V
1
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
–
40
25
85
°
C
2
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
20% tKC
V
SS
–
2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
Parameter
Symbol
C
IN
C
I/O
Test conditions
V
IN
= 0 V
V
OUT
= 0 V
Typ.
Max.
Unit
Input Capacitance
4
5
pF
Input/Output Capacitance
6
7
pF
Note:
These parameters are sample tested.
= 2.5 V)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS816272CC-200V | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| GS816272CC-250IV | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| GS816272CC-250V | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| GS816272CC-V | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| GS816272CGC-150IV | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS816272CC-200M | 制造商:GSI Technology 功能描述:2.5 OR 3.3V - Trays |
| GS816272CC-200V | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V/2.5V 18MBIT 256KX72 6.5NS/3NS 209FBGA - Trays |
| GS816272CC-250 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 5.5NS/3NS 209FBGA - Trays |
| GS816272CC-250I | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 5.5NS/3NS 209FBGA - Trays |
| GS816272CC-250V | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V/2.5V 18MBIT 256KX72 5.5NS/3NS 209FBGA - Trays |
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