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參數資料
型號: GS816272CC-250IV
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 256K x 72 18Mb S/DCD Sync Burst SRAMs
中文描述: 256K X 72 CACHE SRAM, 5.5 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁數: 7/29頁
文件大小: 851K
代理商: GS816272CC-250IV
Synchronous Truth Table
Operation
Address
Used
State
Diagram
Key
5
E
1
E
2
ADSP
ADSC
ADV
W
3
DQ
4
Deselect Cycle, Power Down
None
X
H
X
X
L
X
X
High-Z
Read Cycle, Begin Burst
External
R
L
F
L
X
X
X
Q
Read Cycle, Begin Burst
External
R
L
F
H
L
X
F
Q
Write Cycle, Begin Burst
External
W
L
T
H
L
X
T
D
Read Cycle, Continue Burst
Next
CR
X
T
H
H
L
F
Q
Read Cycle, Continue Burst
Next
CR
H
T
X
H
L
F
Q
Write Cycle, Continue Burst
Next
CW
X
X
H
H
L
T
D
Write Cycle, Continue Burst
Next
CW
H
X
X
H
L
T
D
Read Cycle, Suspend Burst
Current
X
X
H
H
H
F
Q
Read Cycle, Suspend Burst
Current
H
X
X
H
H
F
Q
Write Cycle, Suspend Burst
Current
X
X
H
H
H
T
D
Write Cycle, Suspend Burst
Current
H
X
X
H
H
T
D
Notes:
1.
2.
3.
4.
X = Don’t Care, H = High, L = Low
E = T (True) if E
2
= 1 and E
3
= 0; E = F (False) if E
2
= 0 or E
3
= 1.
W = T (True) and F (False) is defined in the Byte Write Truth Table preceding
G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See
BOLD
items above.
Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See
ITALIC
items above.
5.
6.
7.
GS816272CC-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02a 6/2006
7/29
2004, GSI Technology
相關PDF資料
PDF描述
GS816272CC-250V 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS816272CC-V 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS816272CGC-150IV 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS816272CGC-150V 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS816272CGC-200IV 256K x 72 18Mb S/DCD Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS816272CC-250V 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V/2.5V 18MBIT 256KX72 5.5NS/3NS 209FBGA - Trays
GS816272CC-300 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 5NS/2.8NS 209FBGA - Trays
GS816272CC-300I 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 5NS/2.8NS 209FBGA - Trays
GS816272CC-300M 制造商:GSI Technology 功能描述:209 BGA - Bulk
GS816272CC-333 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 4.5NS/2.8NS 209FPBG - Trays
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