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參數資料
| 型號： | GS8162Z18BB-V |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 35.7流水線和流量，通過同步唑的SRAM |
| 文件頁數： | 1/33頁 |
| 文件大小： | 805K |
| 代理商： | GS8162Z18BB-V |
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GS8162ZxxB(B/D)-xxxV
18Mb Pipelined and Flow Through
Synchronous NBT SRAM
250 MHz
–
150 MHz
1.8 V or 2.5 V V
DD
1.8 V or 2.5 V I/O
119- & 165-Bump BGA
Commercial Temp
Industrial Temp
Preliminary
Rev: 1.01a 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
1/33
2004, GSI Technology
Features
NBT (No Bus Turn Around) functionality allows zero wait
Read-Write-Read bus utilization; fully pin-compatible with
both pipelined and flow through NtRAM, NoBL and
ZBT SRAMs
1.8 V or 2.5 V core power supply
1.8 V or 2.5 V I/O supply
User-configurable Pipeline and Flow Through mode
ZQ mode pin for user-selectable high/low output drive
IEEE 1149.1 JTAG-compatible Boundary Scan
On-chip write parity checking; even or odd selectable
On-chip parity encoding and error detection
LBO pin for Linear or Interleave Burst mode
Pin-compatible with 2M, 4M, and 8M devices
Byte write operation (9-bit Bytes)
3 chip enable signals for easy depth expansion
ZZ Pin for automatic power-down
JEDEC-standard 119- and 165-bump BGA packages
RoHS-compliant 119- and 165-bump BGA packages
available
Functional Description
The GS8162ZxxB(B/D)-xxxV is an 18Mbit Synchronous
Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL
or other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Because it is a synchronous device, address, data inputs, and
read/write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8162ZxxB(B/D)-xxxV may be configured by the user
to operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, in addition to the rising-edge-
triggered registers that capture input signals, the device
incorporates a rising edge triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge-triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS8162ZxxB(B/D)-xxxV is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 119-bump or 165-bump BGA package.
Parameter Synopsis
-250
3.0
4.0
-200
3.0
5.0
-150
3.8
6.7
Unit
ns
ns
Pipeline
3-1-1-1
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
280
330
5.5
5.5
210
240
230
270
6.5
6.5
185
205
185
210
7.5
7.5
170
190
mA
mA
ns
ns
mA
mA
Flow Through
2-1-1-1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8162Z18BD-200 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 18MBIT 1MX18 6.5NS/3NS 165FBGA - Trays |
| GS8162Z18BD-200I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 6.5NS/3NS 165FBGA - Trays |
| GS8162Z18BD-200IV | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V/2.5V 18MBIT 1MX18 6.5NS/3NS 165FBGA - Trays |
| GS8162Z18BD-200M | 制造商:GSI Technology 功能描述:165 BGA - Bulk |
| GS8162Z18BD-200V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 6.5NS/3NS 165FPBGA - Trays |
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