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參數(shù)資料
| 型號(hào)： | GS8321E32GE-250IV |
| 廠商： | GSI TECHNOLOGY |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| 中文描述： | 1M X 32 CACHE SRAM, 5.5 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 |
| 文件頁(yè)數(shù)： | 1/31頁(yè) |
| 文件大小： | 739K |
| 代理商： | GS8321E32GE-250IV |
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GS8321E18/32/36E-xxxV
2M x 18, 1M x 32, 1M x 36
36Mb Sync Burst SRAMs
250 MHz
–
133 MHz
1.8 V or 2.5 V V
DD
1.8 V or 2.5 V I/O
165-Bump FP-BGA
Commercial Temp
Industrial Temp
Rev: 1.04 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
1/31
2003, GSI Technology
Features
FT pin for user-configurable flow through or pipeline operation
Dual Cycle Deselect (DCD) operation
IEEE 1149.1 JTAG-compatible Boundary Scan
1.8 V or 2.5 V core power supply
1.8 V or 2.5 V I/O supply
LBO pin for Linear or Interleaved Burst mode
Internal input resistors on mode pins allow floating mode pins
Default to Interleaved Pipeline mode
Byte Write (BW) and/or Global Write (GW) operation
Internal self-timed write cycle
Automatic power-down for portable applications
JEDEC-standard 165-bump FP-BGA package
RoHS-compliant 165-bump BGA package available
Functional Description
Applications
The GS8321E18/32/36E-xxxV is a 37,748,736-bit high
performance synchronous SRAM with a 2-bit burst address
counter. Although of a type originally developed for Level 2
Cache applications supporting high performance CPUs, the
device now finds application in synchronous SRAM
applications, ranging from DSP main store to networking chip
set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV) and write control inputs (Bx, BW,
GW) are synchronous and are controlled by a positive-edge-
triggered clock input (CK3). Output enable (G) and power down
control (ZZ) are asynchronous inputs. Burst cycles can be
initiated with either ADSP or ADSC inputs. In Burst mode,
subsequent burst addresses are generated internally and are
controlled by ADV. The burst address counter may be
configured to count in either linear or interleave order with the
Linear Burst Order (LBO) input. The Burst function need not be
used. New addresses can be loaded on every cycle with no
degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the
user via the FT mode pin (Pin 14). Holding the FT mode pin low
places the RAM in Flow Through mode, causing output data to
bypass the Data Output Register. Holding FT high places the
RAM in Pipeline mode, activating the rising-edge-triggered Data
Output Register.
DCD Pipelined Reads
The GS8321E18/32/36E-xxxV is a DCD (Dual Cycle Deselect)
pipelined synchronous SRAM. SCD (Single Cycle Deselect)
versions are also available. DCD SRAMs pipeline disable
commands to the same degree as read commands. DCD RAMs
hold the deselect command for one full cycle and then begin
turning off their outputs just after the second rising edge of
clock.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write control
inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High)
of the ZZ signal, or by stopping the clock (CK). Memory data is
retained during Sleep mode.
Core and Interface Voltages
The GS8321E18/32/36E-xxxV operates on a 1.8 V or 2.5 V
power supply. All inputs are 1.8 V or 2.5 V compatible. Separate
output power (V
DDQ
) pins are used to decouple output noise
from the internal circuits and are 1.8 V or 2.5 Vcompatible.
Parameter Synopsis
-250 -225 -200 -166 -150 -133 Unit
3.0
4.0
4.4
5.0
6.0
285
330
290
255
235
5.5
5.5
6.0
6.5
7.0
205
235
225
210
200
Pipeline
3-1-1-1
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
3.0
3.0
3.5
3.8
6.6
190
220
7.5
7.5
165
190
4.0
7.5
165
195
8.5
8.5
155
175
ns
ns
mA
mA
ns
ns
mA
mA
250
215
200
Flow
Through
2-1-1-1
6.0
6.5
7.0
195
185
175
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8321E32GE-250V | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS8321E36E-133IV | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS8321E36E-133V | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS8321E36E-150IV | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS8321E36E-150V | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8321E32GE-250V | 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS8321E36AD-150 | 制造商:GSI Technology 功能描述:165 BGA - Bulk |
| GS8321E36AD-150I | 制造商:GSI Technology 功能描述:165 BGA - Bulk |
| GS8321E36AD-150IV | 制造商:GSI Technology 功能描述:165 BGA - Bulk |
| GS8321E36AD-150V | 制造商:GSI Technology 功能描述:165 BGA - Bulk |
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