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參數資料
| 型號： | GS8321Z18E-200IV |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 36Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| 中文描述： | 2M X 18 ZBT SRAM, 6.5 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, FPBGA-165 |
| 文件頁數： | 1/32頁 |
| 文件大小： | 737K |
| 代理商： | GS8321Z18E-200IV |
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Rev: 1.05 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
1/32
2003, GSI Technology
GS8321Z18/32/36E-xxxV
36Mb Pipelined and Flow Through
Synchronous NBT SRAM
250 MHz–133 MHz
1.8 V or 2.5 V V
DD
1.8 V or 2.5 V I/O
165-Bump FP-BGA
Commercial Temp
Industrial Temp
Features
User-configurable Pipeline and Flow Through mode
NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization
Fully pin-compatible with both pipelined and flow through
NtRAM, NoBL and ZBT SRAMs
IEEE 1149.1 JTAG-compatible Boundary Scan
1.8 V or 2.5 V core power supply
1.8 V or 2.5 V I/O supply
LBO pin for Linear or Interleave Burst mode
Pin-compatible with 2Mb, 4Mb, 8Mb, and 18Mb devices
Byte write operation (9-bit Bytes)
3 chip enable signals for easy depth expansion
ZZ pin for automatic power-down
JEDEC-standard 165-bump FP-BGA package
RoHS-compliant 165-bump BGA package available
Functional Description
The GS8321Z18/32/36E-xxxV is a 36Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable, ZZ and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8321Z18/32/36E-xxxV may be configured by the user
to operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, in addition to the rising-edge-
triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS8321Z18/32/36E-xxxV is implemented with GSI's high
performance CMOS technology and is available in JEDEC-
standard 165-bump FP-BGA package.
Parameter Synopsis
-250 -225 -200 -166 -150 -133 Unit
3.0
4.0
4.4
5.0
6.0
285
350
320
295
260
6.5
6.5
7.0
7.5
8.0
205
235
225
210
200
Pipeline
3-1-1-1
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
3.0
3.0
3.5
3.8
6.6
210
240
8.5
8.5
165
190
4.0
7.5
185
215
8.5
8.5
155
175
ns
ns
mA
mA
ns
ns
mA
mA
265
245
220
Flow
Through
2-1-1-1
7.0
7.5
8.0
195
185
175
相關PDF資料 |
PDF描述 |
|---|---|
| GS8321Z18E-200V | 36Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS8321Z18E-225IV | 36Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS8321Z18E-225V | 36Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS8321Z18E-250IV | 36Mb Pipelined and Flow Through Synchronous NBT SRAMs |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8321Z18E-200V | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 36MBIT 2MX18 7.5NS/3NS 165FPBGA - Trays |
| GS8321Z18E-225 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:36Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS8321Z18E-225I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:36Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS8321Z18E-225IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:36Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS8321Z18E-225V | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 36MBIT 2MX18 7NS/2.7NS 165FPBGA - Trays |
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