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參數資料
型號: GS8322V18E-150I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
中文描述: 2M X 18 CACHE SRAM, 8.5 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁數: 15/42頁
文件大?。?/td> 1038K
代理商: GS8322V18E-150I
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and
assumes ADSP is tied high and ADV is tied low.
3.
Preliminary
GS8322V18(B/E)/GS8322V36(B/E)/GS8322V72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 4/2005
15/42
2003, GSI Technology
Simplified State Diagram
相關PDF資料
PDF描述
GS8322V18E-166 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V18E-166I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V18E-200 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V18E-200I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V18E-225 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS8322V72C-133 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/4NS 209FBGA - Trays
GS8322V72C-133I 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/4NS 209FBGA - Trays
GS8322V72C-150 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/3.8NS 209FBGA - Trays
GS8322V72C-150I 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/3.8NS 209FBGA - Trays
GS8322V72C-166 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8NS/3.5NS 209FBGA - Trays
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