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參數資料
| 型號： | GS8322V36GB-150I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| 中文描述： | 1M X 36 CACHE SRAM, 8.5 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 1.27 MM PITCH, LEAD FREE, FPBGA-119 |
| 文件頁數： | 37/42頁 |
| 文件大小： | 1038K |
| 代理商： | GS8322V36GB-150I |
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Preliminary
GS8322V18(B/E)/GS8322V36(B/E)/GS8322V72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 4/2005
37/42
2003, GSI Technology
Ordering Information for GSI Synchronous Burst RAMs
Org
Part Number
1
Type
Package
Speed
2
(MHz/ns)
T
A3
2M x 18
GS8322V18B-250
DCD Pipeline/Flow Through
119 BGA (var.2)
250/6.5
C
2M x 18
GS8322V18B-225
DCD Pipeline/Flow Through
119 BGA (var.2)
225/7
C
2M x 18
GS8322V18B-200
DCD Pipeline/Flow Through
119 BGA (var.2)
200/7.5
C
2M x 18
GS8322V18B-166
DCD Pipeline/Flow Through
119 BGA (var.2)
166/8
C
2M x 18
GS8322V18B-150
DCD Pipeline/Flow Through
119 BGA (var.2)
150/8.5
C
2M x 18
GS8322V18B-133
DCD Pipeline/Flow Through
119 BGA (var.2)
133/8.5
C
2M x 18
GS8322V18E-250
DCD Pipeline/Flow Through
165 BGA (var.1)
250/6.5
C
2M x 18
GS8322V18E-225
DCD Pipeline/Flow Through
165 BGA (var.1)
225/7
C
2M x 18
GS8322V18E-200
DCD Pipeline/Flow Through
165 BGA (var.1)
200/7.5
C
2M x 18
GS8322V18E-166
DCD Pipeline/Flow Through
165 BGA (var.1)
166/8
C
2M x 18
GS8322V18E-150
DCD Pipeline/Flow Through
165 BGA (var.1)
150/8.5
C
2M x 18
GS8322V18E-133
DCD Pipeline/Flow Through
165 BGA (var.1)
133/8.5
C
1M x 36
GS8322V36B-250
SCD/DCD Pipeline/Flow Through
119 BGA (var.2)
250/6.5
C
1M x 36
GS8322V36B-225
SCD/DCD Pipeline/Flow Through
119 BGA (var.2)
225/7
C
1M x 36
GS8322V36B-200
SCD/DCD Pipeline/Flow Through
119 BGA (var.2)
200/7.5
C
1M x 36
GS8322V36B-166
SCD/DCD Pipeline/Flow Through
119 BGA (var.2)
166/8
C
1M x 36
GS8322V36B-150
SCD/DCD Pipeline/Flow Through
119 BGA (var.2)
150/8.5
C
1M x 36
GS8322V36B-133
SCD/DCD Pipeline/Flow Through
119 BGA (var.2)
133/8.5
C
1M x 36
GS8322V36E-250
SCD/DCD Pipeline/Flow Through
165 BGA (var.1)
250/6.5
C
1M x 36
GS8322V36E-225
SCD/DCD Pipeline/Flow Through
165 BGA (var.1)
225/7
C
1M x 36
GS8322V36E-200
SCD/DCD Pipeline/Flow Through
165 BGA (var.1)
200/7.5
C
1M x 36
GS8322V36E-166
SCD/DCD Pipeline/Flow Through
165 BGA (var.1)
166/8
C
1M x 36
GS8322V36E-150
SCD/DCD Pipeline/Flow Through
165 BGA (var.1)
150/8.5
C
Notes:
1.
2.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8322V18B-150IB.
The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
3.
4.
相關PDF資料 |
PDF描述 |
|---|---|
| GS8322V36GB-166 | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS8322V36GB-166I | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS8322V36GB-200 | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS8322V36GB-200I | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS8322V36GB-225 | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8322V72C-133 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/4NS 209FBGA - Trays |
| GS8322V72C-133I | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/4NS 209FBGA - Trays |
| GS8322V72C-150 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/3.8NS 209FBGA - Trays |
| GS8322V72C-150I | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/3.8NS 209FBGA - Trays |
| GS8322V72C-166 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8NS/3.5NS 209FBGA - Trays |
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