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參數(shù)資料
型號(hào)： GS8322V36GE-133
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
中文描述： 1M X 36 CACHE SRAM, 8.5 ns, PBGA165
封裝： 15 X 17 MM, 1 MM PITCH, LEAD FREE, FPBGA-165
文件頁(yè)數(shù)： 17/42頁(yè)
文件大小： 1038K
代理商： GS8322V36GE-133
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 3.6
V
–
0.5 to 3.6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
3.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
3.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
Preliminary
GS8322V18(B/E)/GS8322V36(B/E)/GS8322V72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 4/2005
17/42
2003, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
V
DD
1.6
1.8
2.0
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ
1.6
1.8
2.0
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
–
40
25
85
°
C
2
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料
PDF描述
GS8322V36GE-133I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V36GE-150 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V36GE-150I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V36GE-166 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V36GE-166I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8322V72C-133 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/4NS 209FBGA - Trays
GS8322V72C-133I 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/4NS 209FBGA - Trays
GS8322V72C-150 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/3.8NS 209FBGA - Trays
GS8322V72C-150I 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/3.8NS 209FBGA - Trays
GS8322V72C-166 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8NS/3.5NS 209FBGA - Trays
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