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參數(shù)資料
型號(hào): GS8322ZV18B
廠商: GSI TECHNOLOGY
英文描述: 36Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 流水線和流量分配36MB通過(guò)同步唑的SRAM
文件頁(yè)數(shù): 18/39頁(yè)
文件大小: 975K
代理商: GS8322ZV18B
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
Description
Value
Unit
V
DD
Voltage on V
DD
Pins
0.5 to 3.6
V
V
DDQ
Voltage in V
DDQ
Pins
0.5 to 3.6
V
V
I/O
Voltage on I/O Pins
0.5 to V
DDQ
+0.5 (
3.6 V max.)
0.5 to V
DD
+0.5 (
3.6 V max.)
V
V
IN
Voltage on Other Input Pins
V
I
IN
Input Current on Any Pin
+/
20
mA
I
OUT
Output Current on Any I/O Pin
+/
20
mA
P
D
Package Power Dissipation
1.5
W
T
STG
Storage Temperature
55 to 125
o
C
T
BIAS
Temperature Under Bias
55 to 125
o
C
GS8322ZV18(B/E)/GS8322ZV36(B/E)/GS8322ZV72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03a 2/2006
18/39
2002, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
V
DD
1.6
1.8
2.0
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ
1.6
1.8
2.0
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
40
25
85
°
C
2
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料
PDF描述
GS8322ZV18B-133 36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8322ZV18B-133I 36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8322ZV18B-150 36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8322ZV18B-150I 36Mb Pipelined and Flow Through Synchronous NBT SRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8322ZV18B-133 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 2MX18 8.5NS/4NS 119FBGA - Trays
GS8322ZV18B-150 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 2MX18 8.5NS/3.8NS 119FBGA - Trays
GS8322ZV72C-133 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/4NS 209FBGA - Trays
GS8322ZV72C-150 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/3.8NS 209FBGA - Trays
GS8322ZV72C-166 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8NS/3.5NS 209FBGA - Trays
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