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參數(shù)資料
型號(hào)： GS832418B-150
廠商： GSI TECHNOLOGY
元件分類(lèi)： DRAM
英文描述： 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
中文描述： 2M X 18 CACHE SRAM, 10 ns, PBGA119
封裝： 14 X 22 MM, 1.27 MM PITCH, BGA-119
文件頁(yè)數(shù)： 13/46頁(yè)
文件大小： 1149K
代理商： GS832418B-150
Rev: 1.00 10/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
13/46
2001, Giga Semiconductor, Inc.
Preliminary
GS832418(B/C)/GS832436(B/C)/GS832472(C)
Mode Pin Functions
Note:
There are pull-up devices on the ZQ, SCD and FT pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the
chip will operate in the default states as specified in the above tables.
Enable / Disable Parity I/O Pins
This SRAM allows the user to configure the device to operate in Parity I/O active (x18, x36, or x72) or in Parity I/O inactive (x16,
x32, or x64) mode. Holding the PE bump low or letting it float will activate the 9th I/O on each byte of the RAM. Grounding PE
deactivates the 9th I/O of each byte, although the bit in each byte of the memory array remains active to store and recall parity bits
generated and read into the ByteSafe parity circuits.
Burst Counter Sequences
Linear Burst Sequence
BPR 1999.05.18
Mode Name
Pin
Name
State
Function
Burst Order Control
LBO
L
H
L
Linear Burst
Interleaved Burst
Flow Through
Pipeline
Active
Standby, I
DD
= I
SB
Dual Cycle Deselect
Single Cycle Deselect
High Drive (Low Impedance)
Low Drive (High Impedance)
Output Register Control
FT
H or NC
L or NC
Power Down Control
ZZ
H
Single/Dual Cycle Deselect Control
SCD
L
H or NC
L
H or NC
FLXDrive Output Impedance Control
ZQ
Note: The burst counter wraps to initial state on the 5th clock.
I
nterleaved Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
相關(guān)PDF資料
PDF描述
GS832436B-200 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436B-200I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436B-225 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436B-225I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436B-250 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8324Z36B-133 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 10NS/4NS 119FBGA - Trays
GS8324Z36B-200I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 7.5NS/3NS 119FBGA - Trays
GS8324Z72C200 制造商:G.S.I. 功能描述:
GS8342D06BD-350 制造商:GSI Technology 功能描述:165 FBGA - Bulk
GS8342D06BD-500 制造商:GSI Technology 功能描述:165 FBGA - Bulk
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