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參數資料
| 型號： | GS832418B-150I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| 中文描述： | 2M X 18 CACHE SRAM, 10 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 1.27 MM PITCH, BGA-119 |
| 文件頁數： | 40/46頁 |
| 文件大小： | 1149K |
| 代理商： | GS832418B-150I |
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Rev: 1.00 10/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
40/46
2001, Giga Semiconductor, Inc.
Preliminary
GS832418(B/C)/GS832436(B/C)/GS832472(C)
Notes
:
1.
Depending on the package, some input pads of the scan chain may not be connected to any external pin. In such case: LBO = 1, ZQ = 1,
PE = 0, SD = 0, ZZ = 0, FT = 1, DP = 1, and SCD = 1.
Every DQ pad consists of two scan registers—D is for input capture, and Q is for output capture.
A single register (#194) for controlling tristate of all the DQ pins is at the end of the scan chain (i.e., the last bit shifted in this tristate control
is effective after JTAG EXTEST instruction is executed.
1 = no connect, internally set to logic value 1
0 = no connect, internally set to logic value 0
X = no connect, value is undefined
2.
3.
4.
5.
6.
GS832418/36/72 Boundary Scan Chain Order
Order
x72
x36
x18
Bump
x72
x36
x18
1(TBD)
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PDF描述 |
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| GS832418B | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS832418B-133 | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS832418B-133I | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS832418B-150 | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS832436B-200 | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8324Z36B-133 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 10NS/4NS 119FBGA - Trays |
| GS8324Z36B-200I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 7.5NS/3NS 119FBGA - Trays |
| GS8324Z72C200 | 制造商:G.S.I. 功能描述: |
| GS8342D06BD-350 | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
| GS8342D06BD-500 | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
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