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參數資料
型號: GS832418C-166
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
中文描述: 2M X 18 CACHE SRAM, 8.5 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁數: 45/46頁
文件大小: 1149K
代理商: GS832418C-166
Rev: 1.00 10/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
45/46
2001, Giga Semiconductor, Inc.
Preliminary
GS832418(B/C)/GS832436(B/C)/GS832472(C)
512K x 72
512K x 72
512K x 72
512K x 72
512K x 72
Notes:
1.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS832418B-150IB.
2.
The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
4.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which
are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
GS832472C-225I
GS832472C-200I
GS832472C-166I
GS832472C-150I
GS832472C-133I
SCD/DCD Pipeline/Flow Through
SCD/DCD Pipeline/Flow Through
SCD/DCD Pipeline/Flow Through
SCD/DCD Pipeline/Flow Through
SCD/DCD Pipeline/Flow Through
209 BGA
209 BGA
209 BGA
209 BGA
209 BGA
225/6.5
200/7.5
166/8.5
150/10
133/11
I
I
I
I
I
Ordering Information for GSI Synchronous Burst RAMs
(Continued)
Org
Part Number
1
Type
Package
Speed
2
(MHz/ns)
T
A3
相關PDF資料
PDF描述
GS832418C-166I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418C-200 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418C-200I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418C-225 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418C-225I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
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