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參數(shù)資料
型號(hào): GS832418C-225
廠(chǎng)商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
中文描述: 2M X 18 CACHE SRAM, 6 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁(yè)數(shù): 24/46頁(yè)
文件大小: 1149K
代理商: GS832418C-225
Rev: 1.00 10/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
24/46
2001, Giga Semiconductor, Inc.
Preliminary
GS832418(B/C)/GS832436(B/C)/GS832472(C)
AC Electrical Characteristics
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Parameter
Symbol
-250
-225
-200
-166
-150
-133
Unit
Min
4.0
1.5
Max
2.3
Min
4.4
1.5
Max
2.5
Min
5.0
1.5
Max
3.0
Min
6.0
1.5
Max
3.4
Min
6.7
1.5
Max
3.8
Min
7.5
1.5
Max
4.0
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKC
tKQ
tKQX
1.5
1.5
1.5
1.5
1.5
1.5
ns
Flow
Through
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
7.0
3.0
6.0
7.5
3.0
6.0
8.5
3.0
7.5
10.0
3.0
8.5
10.0
3.0
10.0
15.0
3.0
10.0
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKH
tKL
3.0
3.0
3.0
3.0
3.0
3.0
ns
Clock HIGH Time
Clock LOW Time
Clock to Output in
High-Z
G to Output Valid
1.3
1.5
1.3
1.5
1.3
1.5
1.3
1.5
1.5
1.7
1.7
2
ns
ns
tHZ
1
1.5
2.3
1.5
2.5
1.5
3.0
1.5
3.5
1.5
3.8
1.5
4.0
ns
tOE
2.3
2.5
3.2
3.5
3.8
4.0
ns
G to output in Low-Z
tOLZ
1
0
0
0
0
0
0
ns
G to output in High-Z
tOHZ
1
tS
tH
2.3
2.5
3.0
3.5
3.8
4.0
ns
Setup time
Hold time
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
ns
ns
ZZ setup time
tZZS
2
5
5
5
5
5
5
ns
ZZ hold time
tZZH
2
tZZR
1
1
1
1
1
1
ns
ZZ recovery
100
100
100
100
100
100
ns
相關(guān)PDF資料
PDF描述
GS832418C-225I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418C-250 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418C-250I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436B-133 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436B-133I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8324Z36B-133 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 10NS/4NS 119FBGA - Trays
GS8324Z36B-200I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 7.5NS/3NS 119FBGA - Trays
GS8324Z72C200 制造商:G.S.I. 功能描述:
GS8342D06BD-350 制造商:GSI Technology 功能描述:165 FBGA - Bulk
GS8342D06BD-500 制造商:GSI Technology 功能描述:165 FBGA - Bulk
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